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| PartNumber | IRFHM792TRPBF | IRFHM792TR2PBF |
| Description | MOSFET 100V DUAL N-CH HEXFET | MOSFET MOSFT 100V dual 2.9A 195mOhm |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 2.3 A | 2.3 A |
| Rds On Drain Source Resistance | 195 mOhms | 195 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 4.2 nC | 4.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.3 W | 2.3 W |
| Configuration | Dual | Dual |
| Packaging | Reel | Reel |
| Height | 0.9 mm | 0.9 mm |
| Length | 3.3 mm | 3.3 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 3.5 S | 3.5 S |
| Fall Time | 2.6 ns | 2.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4.7 ns | 4.7 ns |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 5.2 ns | 5.2 ns |
| Typical Turn On Delay Time | 3.4 ns | 3.4 ns |
| Part # Aliases | SP001554848 | SP001575860 |
| Channel Mode | - | Enhancement |
| Unit Weight | - | 0.001164 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFHM792TRPBF | MOSFET 100V DUAL N-CH HEXFET | |
| IRFHM792TR2PBF | IGBT Transistors MOSFET MOSFT 100V dual 2.9A 195mOhm | ||
| IRFHM792TRPBF | RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET | ||
Infineon / IR |
IRFHM792TR2PBF | MOSFET MOSFT 100V dual 2.9A 195mOhm | |
| IRFHM792TRPBFINFINEON-CS | Nuovo e originale |