IRFHM792TRPBF

Mfr. #:: IRFHM792TRPBF
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRFHM792TRPBF Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: FET - Array

Serie: HEXFETR

Confezione: Nastro e bobina (TR)

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-PowerVDFN

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-PQFN (3.3x3.3), Power33

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 2.3W

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Ingresso-Capacità-Ciss-Vds: 251pF @ 25V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 195 mOhm @ 2.9A, 10V

Vgs-th-Max-Id: 4V @ 10μA

Gate-Carica-Qg-Vgs: 6.3nC @ 10V

Pd-Power-Dissipazione: 2.3 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 2.6 ns

Ora di alzarsi: 4.7 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 2.3 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 3 V

Rds-On-Drain-Source-Resistenza: 195 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 5.2 ns

Tempo di ritardo all'accensione tipico: 3.4 ns

Qg-Gate-Carica: 4.2 nC

Transconduttanza diretta-Min: 3.5 S

Tags: IRFHM79, IRFHM7, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFHM792TRPBF Descrizione

***ure Electronics: Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ernational Rectifier: 100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package

***et: Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R

***ark: N CH MOSFET, DUAL, 100V, 3.4A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified INDUSTRIAL; Qualified MSL1; Dual N-Channel MOSFET

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRFHM792TRPBF DISTI # IRFHM792TRPBF-ND	Infineon Technologies AG	MOSFET 2N-CH 100V 2.3A 8PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.9263
IRFHM792TRPBF DISTI # IRFHM792TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM792TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.7189 8000:$0.6929 16000:$0.6679 24000:$0.6449 40000:$0.6339
IRFHM792TRPBF DISTI # SP001554848	Infineon Technologies AG	Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN T/R (Alt: SP001554848) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.9309 8000:€0.7609 16000:€0.6979 24000:€0.6439 40000:€0.5979
IRFHM792TRPBF DISTI # 942-IRFHM792TRPBF	Infineon Technologies AG	MOSFET 100V DUAL N-CH HEXFET RoHS: Compliant	161	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9300 4000:$0.8300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IRFHM792TRPBF OMO.#: OMO-IRFHM792TRPBF	MOSFET 100V DUAL N-CH HEXFET
	Mfr.#: IRFHM792TR2PBF OMO.#: OMO-IRFHM792TR2PBF	MOSFET MOSFT 100V dual 2.9A 195mOhm
	Mfr.#: IRFHM7194TRPBF OMO.#: OMO-IRFHM7194TRPBF	MOSFET TRENCH_MOSFETS
	Mfr.#: IRFHM7194TRPBF OMO.#: OMO-IRFHM7194TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 9.3A
	Mfr.#: IRFHM792TRPBFINFINEON-CS OMO.#: OMO-IRFHM792TRPBFINFINEON-CS-1190	Nuovo e originale
	Mfr.#: IRFHM792TR2PBF OMO.#: OMO-IRFHM792TR2PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 100V dual 2.9A 195mOhm
	Mfr.#: IRFHM792TRPBF OMO.#: OMO-IRFHM792TRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET

Disponibilità

Azione:: Available
Su ordine:: 5000
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Il prezzo attuale di IRFHM792TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,95 USD~~; ~~0,95 USD~~

10: ~~0,90 USD~~; ~~9,03 USD~~

100: ~~0,86 USD~~; ~~85,58 USD~~

500: ~~0,81 USD~~; ~~404,10 USD~~

1000: ~~0,76 USD~~; ~~760,70 USD~~

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IRFHM792TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes