 |  | | |
| PartNumber | HGTP12N60A4 | HGTP10N120BN | HGTP12N60A4D |
| Description | IGBT Transistors 600V N-Channel IGBT SMPS Series | IGBT 1200V 35A 298W TO220AB | IGBT 600V 54A 167W TO220AB |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 9.65 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 54 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTP12N60A4_NL | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Series | - | - | - |
| Package Case | - | TO-220-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-220AB | - |
| Power Max | - | 298W | - |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | 35A | - |
| Voltage Collector Emitter Breakdown Max | - | 1200V | - |
| IGBT Type | - | NPT | - |
| Current Collector Pulsed Icm | - | 80A | - |
| Vce on Max Vge Ic | - | 2.7V @ 15V, 10A | - |
| Switching Energy | - | 320μJ (on), 800μJ (off) | - |
| Gate Charge | - | 100nC | - |
| Td on off 25°C | - | 23ns/165ns | - |
| Test Condition | - | 960V, 10A, 10 Ohm, 15V | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTP12N60C3D | IGBT Transistors HGTP12N60C3D | |
| HGTP12N60A4 | IGBT Transistors 600V N-Channel IGBT SMPS Series | ||
ON Semiconductor |
HGTP12N60C3D | IGBT Transistors HGTP12N60C3D | |
| HGTP10N120BN | IGBT 1200V 35A 298W TO220AB | ||
| HGTP12N60A4 | IGBT 600V 54A 167W TO220AB | ||
| HGTP12N60A4D | IGBT 600V 54A 167W TO220AB | ||
| HGTP12N60C3 | IGBT 600V 24A 104W TO220AB | ||
| HGTHLJ-20M0000000 | Nuovo e originale | ||
| HGTHLJ20.000000MHZ | Nuovo e originale | ||
| HGTIS14N36G3VLS | Nuovo e originale | ||
| HGTIS14N37G3VLS | Nuovo e originale | ||
| HGTIS20N35G3VLS | Nuovo e originale | ||
| HGTIS20N36G2VLS | Nuovo e originale | ||
| HGTIS3N60A4S9A | Nuovo e originale | ||
| HGTIS7N60A4DS | Nuovo e originale | ||
| HGTIS7N60A4DS G7N60A4D | Nuovo e originale | ||
| HGTIS7N60A4DS9A | Nuovo e originale | ||
| HGTM12N40C1 | Nuovo e originale | ||
| HGTM20N50E1 | Nuovo e originale | ||
| HGTM24N60D1 | Nuovo e originale | ||
| HGTN10N120BND | Nuovo e originale | ||
| HGTN30N60A | Nuovo e originale | ||
| HGTN30N60A4D | Nuovo e originale | ||
| HGTN40N60 | Nuovo e originale | ||
| HGTN40N60A4D | Nuovo e originale | ||
| HGTP10N120BN 10N120BN | Nuovo e originale | ||
| HGTP10N120BN G10N120BN | Nuovo e originale | ||
| HGTP10N120BN,10N120BN, | Nuovo e originale | ||
| HGTP10N40C1 | Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40C1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40E1 | Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40E1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N40F1D | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N50C1 | Nuovo e originale | ||
| HGTP10N50C1D | Nuovo e originale | ||
| HGTP10N50E1 | Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N50E1D | Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP10N50F1D | Nuovo e originale | ||
| HGTP12N60A4D(PRFMD) | Nuovo e originale | ||
| HGTP12N60A4D? | PT P TO220 12A 600V SMPS | ||
| HGTP12N60B3D | Nuovo e originale | ||
| HGTP12N60C3D G12N60C3D | Nuovo e originale | ||
| HGTP12N60C3DLS | Nuovo e originale | ||
| HGTP12N60C3DR | Nuovo e originale | ||
| HGTP12N60D1 | Nuovo e originale | ||
| HGTP14N36G3VL | Trans IGBT Chip N-CH 390V 18A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: HGTP14N36G3VL) | ||
| HGTP14N40F3VL | Motor / Motion / Ignition Controllers & Drivers 400V/14A/TF<1.2US | ||
| HGTP12N60A4D 12N60A4D | Nuovo e originale | ||
| HGTHLJ20.000MHZ | Nuovo e originale | ||
| HGTHLR32.768MHZ | Nuovo e originale |