HGTP12N60A4

HGTP12N60A4
Mfr. #:
HGTP12N60A4
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTP12N60A4 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP12N60A4 DatasheetHGTP12N60A4 Datasheet (P4-P6)HGTP12N60A4 Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
54 A
Pd - Dissipazione di potenza:
167 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
54 A
Altezza:
9.65 mm
Lunghezza:
10.67 mm
Larghezza:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
54 A
Corrente di dispersione gate-emettitore:
+/- 250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
400
sottocategoria:
IGBT
Parte # Alias:
HGTP12N60A4_NL
Unità di peso:
0.211644 oz
Tags
HGTP12N60A, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBTs 600V N-Channel IGBT SMPS Series
***i-Key
IGBT 600V 54A 167W TO220AB
***inecomponents.com
600V SMPS Series N-Channel IGBT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1
Parte # Mfg. Descrizione Azione Prezzo
HGTP12N60A4D
DISTI # V79:2366_23246385
ON SemiconductorPT P TO220 12A 600V SMPS740
  • 1600:$1.4266
  • 800:$1.6703
  • 100:$2.0614
  • 10:$2.5014
  • 1:$3.1309
HGTP12N60A4D
DISTI # V36:1790_06359709
ON SemiconductorPT P TO220 12A 600V SMPS0
  • 800000:$0.9099
  • 400000:$0.9140
  • 80000:$1.4310
  • 8000:$2.4530
  • 800:$2.6300
HGTP12N60A4D
DISTI # HGTP12N60A4D-ND
ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
517In Stock
  • 5600:$1.1900
  • 3200:$1.2049
  • 800:$1.5619
  • 100:$1.9010
  • 25:$2.2312
  • 10:$2.3650
  • 1:$2.6300
HGTP12N60A4
DISTI # HGTP12N60A4-ND
ON SemiconductorIGBT 600V 54A 167W TO220AB
RoHS: Compliant
Min Qty: 400
Container: Tube
Limited Supply - Call
    HGTP12N60A4D
    DISTI # 32380143
    ON SemiconductorPT P TO220 12A 600V SMPS740
    • 6:$3.1309
    HGTP12N60A4D
    DISTI # 32825695
    ON SemiconductorPT P TO220 12A 600V SMPS200
    • 11:$0.9861
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 1
    Europe - 200
    • 1000:€1.0229
    • 500:€1.0609
    • 100:€1.1019
    • 50:€1.1459
    • 25:€1.1939
    • 10:€1.3019
    • 1:€1.4329
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 188
    Container: Bulk
    Americas - 0
    • 940:$1.5900
    • 1880:$1.5900
    • 188:$1.6900
    • 376:$1.6900
    • 564:$1.6900
    HGTP12N60A4D
    DISTI # HGTP12N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60A4D)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube
    Americas - 0
    • 8000:$0.9259
    • 4800:$0.9499
    • 3200:$0.9619
    • 1600:$0.9739
    • 800:$0.9809
    HGTP12N60A4D
    DISTI # 05M3595
    ON SemiconductorIGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes1888
    • 5000:$1.2300
    • 2500:$1.2700
    • 1000:$1.5600
    • 500:$1.7400
    • 100:$1.8800
    • 10:$2.3500
    • 1:$2.7600
    HGTP12N60A4
    DISTI # 512-HGTP12N60A4
    ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
    RoHS: Compliant
    0
      HGTP12N60A4D
      DISTI # 512-HGTP12N60A4D
      ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant
      0
        HGTP12N60A4Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
        RoHS: Compliant
        679
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        HGTP12N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant
        92185
        • 1000:$1.0900
        • 500:$1.1500
        • 100:$1.2000
        • 25:$1.2500
        • 1:$1.3400
        HGTP12N60A4Harris SemiconductorInsulated Gate Bipolar Transistor
        RoHS: Compliant
        900
        • 1000:$1.3600
        • 500:$1.4300
        • 100:$1.4900
        • 25:$1.5500
        • 1:$1.6700
        HGTP12N60A4DFairchild Semiconductor Corporation 54
          HGTP12N60A4D
          DISTI # HGTP12N60A4D
          ON SemiconductorTransistor: IGBT,600V,23A,167W,TO220-3708
          • 500:$1.2300
          • 100:$1.3200
          • 25:$1.4600
          • 5:$1.8200
          • 1:$2.1300
          HGTP12N60A4DFairchild Semiconductor Corporation 
          RoHS: Not Compliant
          800
            HGTP12N60A4D
            DISTI # 1057676
            ON SemiconductorIGBT, TO-220
            RoHS: Compliant
            1878
            • 1600:$2.2100
            • 800:$2.6700
            • 100:$3.2500
            • 10:$4.0300
            • 1:$4.4900
            HGTP12N60A4D
            DISTI # 1057676
            ON SemiconductorIGBT, TO-2202644
            • 500:£1.4000
            • 250:£1.5500
            • 100:£1.7000
            • 10:£2.1200
            • 1:£2.6600
            Immagine Parte # Descrizione
            MGJ2D051509SC

            Mfr.#: MGJ2D051509SC

            OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

            Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
            Disponibilità
            Azione:
            Available
            Su ordine:
            4500
            Inserisci la quantità:
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