HGTP10N40F1D

HGTP10N40F1D
Mfr. #:
HGTP10N40F1D
Produttore:
Rochester Electronics, LLC
Descrizione:
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTP10N40F1D Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGTP10N4, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
12A, 400V, N-CHANNEL IGBT
Parte # Mfg. Descrizione Azione Prezzo
HGTP10N40F1DHarris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
806
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
Immagine Parte # Descrizione
HGTP10N120BN

Mfr.#: HGTP10N120BN

OMO.#: OMO-HGTP10N120BN-ON-SEMICONDUCTOR

IGBT 1200V 35A 298W TO220AB
HGTP10N120BN 10N120BN

Mfr.#: HGTP10N120BN 10N120BN

OMO.#: OMO-HGTP10N120BN-10N120BN-1190

Nuovo e originale
HGTP10N120BN G10N120BN

Mfr.#: HGTP10N120BN G10N120BN

OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

Nuovo e originale
HGTP10N120BN,10N120BN,

Mfr.#: HGTP10N120BN,10N120BN,

OMO.#: OMO-HGTP10N120BN-10N120BN--1190

Nuovo e originale
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1D

Mfr.#: HGTP10N40E1D

OMO.#: OMO-HGTP10N40E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40F1D

Mfr.#: HGTP10N40F1D

OMO.#: OMO-HGTP10N40F1D-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50C1

Mfr.#: HGTP10N50C1

OMO.#: OMO-HGTP10N50C1-1190

Nuovo e originale
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di HGTP10N40F1D è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,00 USD
0,00 USD
10
0,00 USD
0,00 USD
100
0,00 USD
0,00 USD
500
0,00 USD
0,00 USD
1000
0,00 USD
0,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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