FQB

FQB27P06TM vs FQB27N25TM-F085 vs FQB25N33TM-F085

 
PartNumberFQB27P06TMFQB27N25TM-F085FQB25N33TM-F085
DescriptionMOSFET 60V P-Channel QFETMOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFETMOSFET 330V NCH MOSFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V250 V330 V
Id Continuous Drain Current27 A25.5 A25 A
Rds On Drain Source Resistance55 mOhms108 mOhms230 mOhms
Vgs Gate Source Voltage25 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation3.75 W417 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
Height4.83 mm4.83 mm4.83 mm
Length10.67 mm10.67 mm10.67 mm
SeriesFQB27P06FQB27N25TM_F085FQB25N33TM_F085
Transistor Type1 P-Channel1 N-Channel1 N-Channel
TypeMOSFET--
Width9.65 mm9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min12.4 S--
Fall Time90 ns60 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time185 ns122 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time30 ns81 ns-
Typical Turn On Delay Time18 ns36 ns-
Unit Weight0.070548 oz0.046296 oz0.046296 oz
Vgs th Gate Source Threshold Voltage-4.1 V-
Qg Gate Charge-45 nC-
Qualification-AEC-Q101AEC-Q101
Tradename-UltraFET-
Part # Aliases-FQB27N25TM_F085FQB25N33TM_F085
  • Iniziare con
  • FQB 525
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB27P06TM MOSFET 60V P-Channel QFET
FQB27N25TM-F085 MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET
FQB25N33TM-F085 MOSFET 330V NCH MOSFET
FQB2N60TM MOSFET 600V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQB22P10TM-F085 MOSFET P-CH 100V 22A D2PAK
FQB24N08TM MOSFET N-CH 80V 24A D2PAK
FQB25N33TM MOSFET N-CH 330V 25A D2PAK
FQB25N33TM-F085 MOSFET N-CH 330V 25A D2PAK
FQB27N25TM_AM002 MOSFET N-CH 250V 25.5A D2PAK
FQB27P06TM MOSFET P-CH 60V 27A D2PAK
FQB2N50TM MOSFET N-CH 500V 2.1A D2PAK
FQB2N60TM MOSFET N-CH 600V 2.4A D2PAK
FQB2N80TM MOSFET N-CH 800V 2.4A D2PAK
FQB2N90TM MOSFET N-CH 900V 2.2A D2PAK
FQB2N30TM MOSFET N-CH 300V 2.1A D2PAK
FQB27N25TM-F085 MOSFET N-CH 250V 25.5A 131M
FQB22P10TM-NL Nuovo e originale
FQB22P10TM_F085 -100V /-22A/0.125HM@VGS=-10V
FQB24N08 Nuovo e originale
FQB24N08TM-NL Nuovo e originale
FQB2532 Nuovo e originale
FQB25N33 Nuovo e originale
FQB25N33TM-NB82122 Nuovo e originale
FQB27N25 Nuovo e originale
FQB27N25TM Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB27N25TM-AM002 Nuovo e originale
FQB27N25TM-NL Nuovo e originale
FQB27N25TM_F085 250V, 0.11OHM, 25.5A, N-CH MOS
FQB27N25TU Nuovo e originale
FQB27P06 Nuovo e originale
FQB27P06C Nuovo e originale
FQB27P06TM-NL Nuovo e originale
FQB27P06TM2400 Nuovo e originale
FQB27PPP06TM Nuovo e originale
FQB28N04 Nuovo e originale
FQB28N15 Nuovo e originale
FQB28N30 Nuovo e originale
FQB2N100 Nuovo e originale
FQB2N30 Nuovo e originale
FQB2N50 Nuovo e originale
FQB2N50TM-NL Nuovo e originale
FQB2N60 Nuovo e originale
FQB2N60TM-NL Nuovo e originale
FQB2N80 Nuovo e originale
FQB2N80TM-NL Nuovo e originale
FQB2N90 Nuovo e originale
FQB2N90TM-NL Nuovo e originale
FQB2NA90 Nuovo e originale
FQB25N33TM_F085 IGBT Transistors MOSFET 330V NCH MOSFET
FQB27P06TM-CUT TAPE Nuovo e originale
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