 | | | |
| PartNumber | FQB6N80TM | FQB6N60CTM | FQB6N70TM |
| Description | MOSFET 800V N-Channel QFET | MOSFET N-CH/600V/6A/QFET | MOSFET 700V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 700 V |
| Id Continuous Drain Current | 5.8 A | 5.5 A | 6.2 A |
| Rds On Drain Source Resistance | 1.95 Ohms | 1.7 Ohms | 1.16 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.13 W | 125 W | 3.13 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQB6N80 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 5.9 S | - | 6.4 S |
| Fall Time | 45 ns | 45 ns | 50 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 70 ns | 45 ns | 70 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 45 ns | 55 ns |
| Typical Turn On Delay Time | 30 ns | 15 ns | 25 ns |
| Part # Aliases | FQB6N80TM_NL | FQB6N60CTM_NL | FQB6N70TM_NL |
| Unit Weight | 0.046296 oz | 0.139332 oz | 0.139332 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB6N80TM | MOSFET 800V N-Channel QFET | |
| FQB7N20LTM | MOSFET 200V N-Ch QFET Logic Level | ||
| FQB70N08TM | MOSFET 80V N-Channel QFET | ||
| FQB6N60CTM | MOSFET N-CH/600V/6A/QFET | ||
| FQB6N70TM | MOSFET 700V N-Channel QFET | ||
| FQB6N40CTM-NL | Nuovo e originale | ||
| FQB6N50 | Nuovo e originale | ||
| FQB6N50TM(AM002) | Nuovo e originale | ||
| FQB6N50TM-NL | Nuovo e originale | ||
| FQB6N50TM. | Nuovo e originale | ||
| FQB6N50TM_AM002 | Nuovo e originale | ||
| FQB6N60 | Nuovo e originale | ||
| FQB6N60C | Nuovo e originale | ||
| FQB6N60CTM-NL | Nuovo e originale | ||
| FQB6N60TM-NL | Nuovo e originale | ||
| FQB6N70 | Nuovo e originale | ||
| FQB6N70T | Nuovo e originale | ||
| FQB6N70TM-NL | Nuovo e originale | ||
| FQB6N80 | Nuovo e originale | ||
| FQB6N80TM-NL | Nuovo e originale | ||
| FQB6N90 | Nuovo e originale | ||
| FQB6N90C | Nuovo e originale | ||
| FQB6N90TM-NL | Nuovo e originale | ||
| FQB6P25 | Nuovo e originale | ||
| FQB7042FB | Nuovo e originale | ||
| FQB7045FB | Nuovo e originale | ||
| FQB70N06 | Nuovo e originale | ||
| FQB70N08 | Nuovo e originale | ||
| FQB70N08TM-NL | Nuovo e originale | ||
| FQB70N10 | Nuovo e originale | ||
| FQB70N10TM-NL | Nuovo e originale | ||
| FQB7N10L | Nuovo e originale | ||
| FQB7N10LT1 | Nuovo e originale | ||
| FQB7N10TM-NL | Nuovo e originale | ||
| FQB7N10TMFSC | Nuovo e originale | ||
| FQB7N20 | Nuovo e originale | ||
| FQB6N80TM-CUT TAPE | Nuovo e originale | ||
ON Semiconductor |
FQB6N50TM | MOSFET N-CH 500V 5.5A D2PAK | |
| FQB6N60CTM | MOSFET N-CH 600V 5.5A D2PAK | ||
| FQB6N60TM | MOSFET N-CH 600V 6.2A D2PAK | ||
| FQB6N70TM | MOSFET N-CH 700V 6.2A D2PAK | ||
| FQB6N80TM | MOSFET N-CH 800V 5.8A D2PAK | ||
| FQB6N90TM_AM002 | MOSFET N-CH 900V 5.8A D2PAK | ||
| FQB70N08TM | MOSFET N-CH 80V 70A D2PAK | ||
| FQB70N10TM_AM002 | MOSFET N-CH 100V 57A D2PAK | ||
| FQB7N10LTM | MOSFET N-CH 100V 7.3A D2PAK | ||
| FQB7N10TM | MOSFET N-CH 100V 7.3A D2PAK | ||
| FQB6N90TM | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB70N10TM | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB7N10 | Nuovo e originale |