 |  | | |
| PartNumber | CSD25402Q3A | CSD25401Q3 /CSD25401 | CSD25402Q3 |
| Description | MOSFET P-CH Pwr MOSFET | ||
| Manufacturer | Texas Instruments | - | TI |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | VSONP-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 76 A | - | - |
| Rds On Drain Source Resistance | 8.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 650 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 7.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 125 C | - | + 125 C |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | Single Channel |
| Channel Mode | Enhancement | - | Depletion |
| Tradename | NexFET | - | NexFET |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.9 mm | - | - |
| Length | 3.15 mm | - | - |
| Series | CSD25402Q3A | - | NexFET |
| Transistor Type | 1 P-Channel Power MOSFET | - | 1 P-Channel |
| Width | 3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Fall Time | 12 ns | - | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | 7 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | 25 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-VSON (3.3x3.3) |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 2.8W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 1790pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 72A (Tc) |
| Rds On Max Id Vgs | - | - | 8.9 mOhm @ 10A, 4.5V |
| Vgs th Max Id | - | - | 1.15V @ 250μA |
| Gate Charge Qg Vgs | - | - | 9.7nC @ 4.5V |
| Pd Power Dissipation | - | - | 2.8 W |
| Vgs Gate Source Voltage | - | - | - 12 V |
| Id Continuous Drain Current | - | - | - 15 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 900 mV |
| Rds On Drain Source Resistance | - | - | 8.9 mOhms |
| Qg Gate Charge | - | - | 7.5 nC |
| Forward Transconductance Min | - | - | 59 S |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Texas Instruments |
CSD25485F5 | MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.8x1.5, 42mOhm 3-PICOSTAR -55 to 150 | |
| CSD25402Q3A | MOSFET P-CH Pwr MOSFET | ||
| CSD25484F4 | MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.6x1.0, 109mOhm 3-PICOSTAR -55 to 150 | ||
| CSD25404Q3 | MOSFET 20V Pch MOSFET | ||
| CSD25481F4 | MOSFET P-CH Pwr MOSFET 20V 90mohm | ||
| CSD25483F4 | MOSFET 20V P-CH FemtoFET MOSFET | ||
| CSD25481F4T | MOSFET 20V ,PCh FemtoFET MOSFET | ||
| CSD25484F4T | MOSFET 20V P-Ch FemtoFET MOSFET | ||
| CSD25501F3T | MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.6x0.7, 76mOhm 3-PICOSTAR -55 to 150 | ||
| CSD25483F4T | MOSFET 20V,P-Ch FemtoFET MOSFET | ||
| CSD25480F3T | MOSFET -20V P-channel FemtoFET MOSFET | ||
| CSD25501F3 | MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.6x0.7, 76mOhm 3-PICOSTAR -55 to 150 | ||
| CSD25485F5T | MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.8x1.5, 42mOhm 3-PICOSTAR -55 to 150 | ||
| CSD25401Q3 /CSD25401 | Nuovo e originale | ||
| CSD25402Q3 | Nuovo e originale | ||
| CSD25402Q3A. | Nuovo e originale | ||
| CSD2540Q3A | Nuovo e originale | ||
| CSD25480F3T | MOSFET P-CH 20V 1.7A PICOSTAR | ||
| CSD25481F4T | MOSFET P-CH 20V 2.5A 3PICOSTAR | ||
| CSD25483F4T | MOSFET P-CH 20V LGA | ||
| CSD25484F4T | MOSFET P-CH 20V 2.5A 3PICOSTAR | ||
| CSD25404Q3T | MOSFET P-CH 20V 104A 8VSON | ||
| CSD25485F5T | CSD25485F5T | ||
| CSD25501F3T | 20-V P-CHANNEL FEMTOFET MOSFET | ||
| CSD25402Q3A | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | ||
| CSD25404Q3 | Trans MOSFET P-CH 20V 60A 8-Pin VSON-CLIP EP T/R | ||
| CSD25480F3 | MOSFET P-CH 20V 1.7A PICOSTAR | ||
| CSD25481F4 | MOSFET P-CH 20V 2.5A 3PICOSTAR | ||
| CSD25483F4 | Trans MOSFET P-CH 20V 1.6A 3-Pin PICOSTAR T/R | ||
| CSD25484F4 | MOSFET P-CH 20V 2.5A 3-PICOSTAR | ||
| CSD25485F5 | Trans MOSFET P-CH 20V 5.3A 3-Pin PICOSTAR T/R | ||
| CSD25501F3 | 20V P CH MOSFET | ||
| CSD2820R-T6 | Nuovo e originale | ||
| CSD2N60 | Nuovo e originale | ||
| CSD2TOS-N1 | Nuovo e originale | ||
| CSD2TOS-N1 ROHS | Nuovo e originale | ||
| CSD2V2.1 | Nuovo e originale | ||
| CSD2V2.1/220C040F004 | Nuovo e originale | ||
| CSD2V21 | Nuovo e originale | ||
| CSD3080H | SCR MOD SGL PWR-BLOK 800V 400A | ||
| CSD3120H | SCR MOD SGL PWR-BLOK 1200V 400A | ||
| CSD3122GG-1A | Nuovo e originale | ||
| CSD30308 | Enclosure, Junction Box, Gray, Steel, 30.0 x 30.0 x 8.0 in., Hinged, Qrtr-Turn | ||
| CSD302410 | Wall-Mount Type 4, 12 Enclosure Gray, 30.00x24.00x10.00, Steel | ||
| CSD303010 | Wall-Mount Type 4, 12 Enclosure Gray, 30.00x30.00x10.00, Steel | ||
| CSD302412 | Enclosure, Junction Box, Gray, Steel, 30.0 x 24.0 x 12.0 in., Hinged, Qrtr-Turn | ||
| CSD302412WSS | Stainless Encl. 30.00x24.00x12 | ||
| CSD30248 | Junction Box, Wallmount, Steel, Gray, 30x24x8In, NEMA 4/12/13, Hinged, 1/4 Turn Latch | ||
| CSD302410ST | ENCLOSURE, WALL MOUNT, STEEL, GRAY, Enclosure Type:Electrical / Industrial, Enclosure Material:Steel, External Height - Metric:852mm, External Width - Metric:610mm, External Depth - Metric:254mm, | ||
Infineon Technologies |
CSD3012H | Nuovo e originale |