BSL3

BSL308PEH6327XTSA1 vs BSL314PEH6327XTSA1 vs BSL308PEL6327HTSA1

 
PartNumberBSL308PEH6327XTSA1BSL314PEH6327XTSA1BSL308PEL6327HTSA1
DescriptionMOSFET SMALL SIGNAL+P-CHMOSFET SMALL SIGNAL+P-CHMOSFET 2P-CH 30V 2A 6TSOP
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current2 A1.5 A-
Rds On Drain Source Resistance130 mOhms230 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge- 1.2 nC, - 1.2 nC- 700 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3 mm3 mm-
Transistor Type1 P-Channel2 P-Channel-
Width1.5 mm1.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min4.6 S, 4.6 S3 S-
Fall Time2.8 ns, 2.8 ns2.8 ns-
Product TypeMOSFETMOSFET-
Rise Time7.7 ns, 7.7 ns3.9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.3 ns, 15.3 ns12.4 ns-
Typical Turn On Delay Time5.6 ns, 5.6 ns5.1 ns-
Part # AliasesBSL308PE H6327 SP001101004BSL314PE H6327 SP001101006-
Unit Weight0.000526 oz0.000522 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSL308PEH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL316C H6327 MOSFET SMALL SIGNAL+P-CH
BSL316CH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL372SNH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL373SNH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL314PEH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL308PEH6327XTSA1 MOSFET 2P-CH 30V 2A 6TSOP
BSL308PEL6327HTSA1 MOSFET 2P-CH 30V 2A 6TSOP
BSL314PEL6327HTSA1 MOSFET 2P-CH 30V 1.5A 6TSOP
BSL316C H6327 MOSFET SMALL SIGNAL+P-CH
BSL316CH6327XTSA1 MOSFET N/P-CH 30V 1.4A/1.5A TSOP
BSL316CL6327HTSA1 MOSFET N/P-CH 30V TSOP-6
BSL314PEH6327XTSA1 IGBT Transistors MOSFET SMALL SIGNAL+P-CH
BSL373SNH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL372SNH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSL308PEL6327 Nuovo e originale
BSL314PE Nuovo e originale
BSL314PE L6327 MOSFET P-Ch -30V 1.5A TSOP-6
BSL314PEH6327 Nuovo e originale
BSL314PEL6327 Nuovo e originale
BSL314PEL6327XT -1.5A,-30V,Dual P-channel power MOSFET
BSL315P Nuovo e originale
BSL315P L6327 MOSFET P-Ch -30V 1.5A TSOP-6
BSL315P6327 Nuovo e originale
BSL315PL6327 Nuovo e originale
BSL316C Nuovo e originale
BSL316C (SPJ) Nuovo e originale
BSL316C L6327 MOSFET N and P-Ch 30V 1.4A TSOP-6
BSL3670 Nuovo e originale
BSL316CH6327XTSA1-CUT TAPE Nuovo e originale
BSL316CL6327 Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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