 | |  | |
| PartNumber | BSS225 H6327 | BSS225H6327FTSA1 | BSS225H6327XTSA1 |
| Description | MOSFET N-Ch 600V 90mA SOT-89-3 | MOSFET N-Ch 600V 90mA SOT-89-3 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 90 mA | 90 mA | - |
| Rds On Drain Source Resistance | 28 Ohms | 28 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 5.8 nC | 5.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | 1 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.5 mm | 1.5 mm | - |
| Length | 4.5 mm | 4.5 mm | - |
| Series | BSS225 | BSS225 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Width | 2.5 mm | 2.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 50 mS | 50 mS | - |
| Fall Time | 41 ns | 41 ns | 41 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 38 ns | 38 ns | 38 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 62 ns | 62 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Part # Aliases | BSS225H6327FTSA1 SP001047644 | BSS225 H6327 SP001047644 | - |
| Unit Weight | - | 0.004603 oz | 0.004603 oz |
| Part Aliases | - | - | BSS225 H6327 SP001195032 |
| Package Case | - | - | SOT-89-4 |
| Pd Power Dissipation | - | - | 1 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 90 mA |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.3 V |
| Rds On Drain Source Resistance | - | - | 45 Ohms |
| Qg Gate Charge | - | - | 3.9 nC |
| Forward Transconductance Min | - | - | 50 mS |