BSS225H6327XTSA1

BSS225H6327XTSA1
Mfr. #:
BSS225H6327XTSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSS225H6327XTSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSS225H6327XTSA1 DatasheetBSS225H6327XTSA1 Datasheet (P4-P6)BSS225H6327XTSA1 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
BSS225 H6327 SP001195032
Unità di peso
0.004603 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOT-89-4
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 P-Channel
Pd-Power-Dissipazione
1 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
41 ns
Ora di alzarsi
38 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
90 mA
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.3 V
Rds-On-Drain-Source-Resistenza
45 Ohms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
62 ns
Tempo di ritardo all'accensione tipico
14 ns
Qg-Gate-Carica
3.9 nC
Transconduttanza diretta-Min
50 mS
Modalità canale
Aumento
Tags
BSS225H, BSS225, BSS22, BSS2, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSS225H6327XTSA1
DISTI # V36:1790_06391969
Infineon Technologies AGTrans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant
0
    BSS225H6327XTSA1
    DISTI # BSS225H6327XTSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 90MA SOT89
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.1795
    BSS225H6327XTSA1
    DISTI # BSS225H6327XTSA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 0.09A 4-Pin SOT-89 T/R - Tape and Reel (Alt: BSS225H6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      BSS225H6327XTSA1
      DISTI # 726-BSS225H6327XTSA1
      Infineon Technologies AGMOSFET SMALL SIGNAL+N-CH
      RoHS: Compliant
      0
        Immagine Parte # Descrizione
        BSS225H6327FTSA1

        Mfr.#: BSS225H6327FTSA1

        OMO.#: OMO-BSS225H6327FTSA1

        MOSFET N-Ch 600V 90mA SOT-89-3
        BSS225H6327

        Mfr.#: BSS225H6327

        OMO.#: OMO-BSS225H6327-1190

        Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327)
        BSS225H6327FTSA1

        Mfr.#: BSS225H6327FTSA1

        OMO.#: OMO-BSS225H6327FTSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 0.09A SOT-89
        BSS225H6327XTSA1

        Mfr.#: BSS225H6327XTSA1

        OMO.#: OMO-BSS225H6327XTSA1-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET SMALL SIGNAL+P-CH
        Disponibilità
        Azione:
        Available
        Su ordine:
        5000
        Inserisci la quantità:
        Il prezzo attuale di BSS225H6327XTSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,27 USD
        0,27 USD
        10
        0,26 USD
        2,56 USD
        100
        0,24 USD
        24,24 USD
        500
        0,23 USD
        114,45 USD
        1000
        0,22 USD
        215,40 USD
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