APT75GP120J vs APT75GP120B2G vs APT75GP120B2

 
PartNumberAPT75GP120JAPT75GP120B2GAPT75GP120B2
DescriptionIGBT Modules FG, IGBT, 1200V, 75A, SOT-227IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT ModulesIGBT TransistorsIGBTs - Single
RoHSYY-
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage3.3 V3.3 V3.3 V
Continuous Collector Current at 25 C128 A100 A100 A
Gate Emitter Leakage Current100 nA100 nA100 nA
Pd Power Dissipation543 W1.042 kW-
Package / CaseSOT-227-4T-Max-3-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingTubeTubeTube
Height9.6 mm5.31 mm-
Length38.2 mm21.46 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width25.4 mm16.26 mm-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountThrough HoleThrough Hole
Maximum Gate Emitter Voltage20 V30 V30 V
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
TradenamePOWER MOS 7 IGBT, ISOTOPPOWER MOS 7 IGBTPOWER MOS 7 IGBT
Unit Weight1.058219 oz--
Technology-Si-
Configuration-SingleSingle
Continuous Collector Current Ic Max-100 A100 A
Continuous Collector Current-100 A-
Series--POWER MOS 7R
Package Case--TO-247-3 Variant
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--*
Power Max--1042W
Reverse Recovery Time trr---
Current Collector Ic Max--100A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--PT
Current Collector Pulsed Icm--300A
Vce on Max Vge Ic--3.9V @ 15V, 75A
Switching Energy--1620μJ (on), 2500μJ (off)
Gate Charge--320nC
Td on off 25°C--20ns/163ns
Test Condition--600V, 75A, 5 Ohm, 15V
Pd Power Dissipation--1.042 kW
Collector Emitter Voltage VCEO Max--1.2 kV
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