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| PartNumber | APT27HZTR-G1 | APT27GA90BD15 | APT27GA90K |
| Description | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 | |
| Manufacturer | Diodes Incorporated | Microchip | - |
| Product Category | Bipolar Transistors - BJT | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-247-3 | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 450 V | 900 V | - |
| Emitter Base Voltage VEBO | 9 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | 2.5 V | - |
| Maximum DC Collector Current | 1.6 A | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | APT27 | - | - |
| DC Current Gain hFE Max | 40 at 100 mA, 10 V | - | - |
| Packaging | Ammo Pack | Tube | - |
| Brand | Diodes Incorporated | Microchip / Microsemi | - |
| Continuous Collector Current | 0.8 A | 48 A | - |
| DC Collector/Base Gain hfe Min | 6 at 300 mA, 10 V | - | - |
| Pd Power Dissipation | 800 mW | 223 W | - |
| Product Type | BJTs - Bipolar Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 2000 | 1 | - |
| Subcategory | Transistors | IGBTs | - |
| Unit Weight | 0.016000 oz | 1.340411 oz | - |
| Technology | - | Si | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Continuous Collector Current at 25 C | - | 48 A | - |
| Continuous Collector Current Ic Max | - | 48 A | - |
| Height | - | 4.69 mm | - |
| Length | - | 20.8 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 15.49 mm | - |
| Gate Emitter Leakage Current | - | 100 nA | - |