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APT27GA90BD15

APT27GA90BD15
Mfr. #:
APT27GA90BD15
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APT27GA90BD15 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT27GA90BD15 DatasheetAPT27GA90BD15 Datasheet (P4-P6)APT27GA90BD15 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
900 V
Tensione di saturazione collettore-emettitore:
2.5 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
48 A
Pd - Dissipazione di potenza:
223 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
48 A
Altezza:
4.69 mm
Lunghezza:
20.8 mm
Intervallo operativo di temperatura:
- 55 C to + 150 C
Larghezza:
15.49 mm
Marca:
Microchip / Microsemi
Corrente continua del collettore:
48 A
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
APT27, APT2, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 900 V 27 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 48A I(C), 900V V(BR)CES, N-Channel, TO-247AD
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***et
Trans IGBT Chip N-CH 900V 43A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 7 Combi 900 V 15 A TO-247
***i-Key
IGBT 900V 43A 250W TO247
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 900V 44A 3-Pin(3+Tab) TO-247
***el Electronic
IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
***i-Key
IGBT 900V 44A 200W C3 TO-247
***ure Electronics
900V, 24A, 2.7Vce, TO-247
***ical
Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT PT MOS 8 Single 900 V 35 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247
***ure Electronics
IGBT Transistors FG, IGBT, 900V, TO-247
***i-Key
IGBT 900V 140A 750W C3 TO-247
***ure Electronics
900V, 60A, 2.7VCE, TO-247
Parte # Mfg. Descrizione Azione Prezzo
APT27GA90BD15
DISTI # APT27GA90BD15-ND		Microsemi CorporationIGBT 900V 48A 223W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		236In Stock
  • 500:$5.0134
  • 100:$5.9837
  • 25:$6.6304
  • 10:$7.2770
  • 1:$8.0900
APT27GA90BD15
DISTI # APT27GA90BD15		Microchip Technology IncTrans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT27GA90BD15)
RoHS: Compliant
Min Qty: 83
Container: Tube		Americas - 0
  • 415:$3.7900
  • 830:$3.7900
  • 249:$3.9900
  • 166:$4.0900
  • 83:$4.1900
APT27GA90BD15
DISTI # 494-APT27GA90BD15		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant		79
  • 1:$7.5500
  • 10:$6.7900
  • 25:$6.1900
  • 100:$5.5800
  • 250:$5.0900
  • 500:$4.6500
  • 1000:$4.0600
APT27GA90BD15
DISTI # APT27GA90BD15		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		230
  • 1:$4.0400
  • 50:$3.9300
  • 100:$3.8900
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Disponibilità
Azione:
79
Su ordine:
2062
Inserisci la quantità:
Il prezzo attuale di APT27GA90BD15 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
7,55 USD
7,55 USD
10
6,79 USD
67,90 USD
25
6,19 USD
154,75 USD
100
5,58 USD
558,00 USD
250
5,09 USD
1 272,50 USD
500
4,65 USD
2 325,00 USD
1000
4,06 USD
4 060,00 USD
2500
3,73 USD
9 325,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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