We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| RFD8P06ESM DISTI # RFD8P06ESM | Renesas Electronics Corporation | - Bulk (Alt: RFD8P06ESM) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| RFD8P06ESM9A DISTI # RFD8P06ESM9A | Renesas Electronics Corporation | (Alt: RFD8P06ESM9A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| RFD8P06ESM | Harris Semiconductor | 8A, 60V, 0.3ohm, P-Channel, POWER MOSFET RoHS: Not Compliant | 414 |
|
| RFD8P06ESM | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1125 |
|
| RFD8P06ESM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 167 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 413 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 413 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1087 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 1087 |
|
| RFD8P06ESM | ISC | DPAK/TO-252 | 5000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: RFD8P05SM96 OMO.#: OMO-RFD8P05SM96-1190 |
Nuovo e originale |
|
|
Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
Nuovo e originale |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06ESM OMO.#: OMO-RFD8P06ESM-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06ESM9A OMO.#: OMO-RFD8P06ESM9A-1190 |
(Alt: RFD8P06ESM9A) |
|
|
Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
|
|
Mfr.#: RFD8P06LESM9AR4407 OMO.#: OMO-RFD8P06LESM9AR4407-1190 |
Nuovo e originale |
|
|
Mfr.#: RFD8P6LE OMO.#: OMO-RFD8P6LE-1190 |
Nuovo e originale |