RFD8P06ESM

RFD8P06ESM
Mfr. #:
RFD8P06ESM
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RFD8P06ESM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INTERSIL
categoria di prodotto
Chip IC
Tags
RFD8P06E, RFD8P06, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
RFD8P06ESM9A
DISTI # RFD8P06ESM9A
Renesas Electronics Corporation(Alt: RFD8P06ESM9A)
RoHS: Compliant
Min Qty: 1
Europe - 0
    RFD8P06ESMHarris SemiconductorPower Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    414
    • 1000:$0.3200
    • 500:$0.3400
    • 100:$0.3600
    • 25:$0.3700
    • 1:$0.4000
    RFD8P06ESMIntersil CorporationMOSFET Transistor, P-Channel, TO-252AA1125
    • 530:$0.3375
    • 94:$0.3780
    • 1:$1.0800
    RFD8P06ESMHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA167
    • 94:$0.3780
    • 20:$0.5400
    • 1:$1.0800
    RFD8P06ESM9AHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM)413
    • 297:$0.9375
    • 134:$1.0125
    • 1:$2.2500
    RFD8P06ESM9AHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA413
    • 297:$0.9375
    • 134:$1.0125
    • 1:$2.2500
    Immagine Parte # Descrizione
    RFD8P05

    Mfr.#: RFD8P05

    OMO.#: OMO-RFD8P05

    MOSFET TO-251AA P-Ch Power
    RFD8P03

    Mfr.#: RFD8P03

    OMO.#: OMO-RFD8P03-1190

    Nuovo e originale
    RFD8P03LSM

    Mfr.#: RFD8P03LSM

    OMO.#: OMO-RFD8P03LSM-1190

    Nuovo e originale
    RFD8P05SM

    Mfr.#: RFD8P05SM

    OMO.#: OMO-RFD8P05SM-ON-SEMICONDUCTOR

    MOSFET P-CH 50V 8A TO-252AA
    RFD8P05SM96

    Mfr.#: RFD8P05SM96

    OMO.#: OMO-RFD8P05SM96-1190

    Nuovo e originale
    RFD8P05SM9AS2385

    Mfr.#: RFD8P05SM9AS2385

    OMO.#: OMO-RFD8P05SM9AS2385-1190

    Nuovo e originale
    RFD8P06

    Mfr.#: RFD8P06

    OMO.#: OMO-RFD8P06-1190

    Nuovo e originale
    RFD8P06E

    Mfr.#: RFD8P06E

    OMO.#: OMO-RFD8P06E-1190

    Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RFD8P06LESM

    Mfr.#: RFD8P06LESM

    OMO.#: OMO-RFD8P06LESM-1190

    8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
    RFD8P6LE

    Mfr.#: RFD8P6LE

    OMO.#: OMO-RFD8P6LE-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di RFD8P06ESM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,48 USD
    0,48 USD
    10
    0,46 USD
    4,56 USD
    100
    0,43 USD
    43,20 USD
    500
    0,41 USD
    204,00 USD
    1000
    0,38 USD
    384,00 USD
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