RFD8P03LSM

RFD8P03LSM
Mfr. #:
RFD8P03LSM
Produttore:
Rochester Electronics, LLC
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RFD8P03LSM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
RFD8P03, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
RFD8P03LSMHarris Semiconductor 
RoHS: Not Compliant
300
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
RFD8P03LSM96Harris Semiconductor 
RoHS: Not Compliant
1800
  • 1000:$0.7000
  • 500:$0.7300
  • 100:$0.7600
  • 25:$0.8000
  • 1:$0.8600
Immagine Parte # Descrizione
RFD8P05SM

Mfr.#: RFD8P05SM

OMO.#: OMO-RFD8P05SM

MOSFET TO-252AA P-Ch Power
RFD8P03

Mfr.#: RFD8P03

OMO.#: OMO-RFD8P03-1190

Nuovo e originale
RFD8P03L

Mfr.#: RFD8P03L

OMO.#: OMO-RFD8P03L-1190

Nuovo e originale
RFD8P05SM

Mfr.#: RFD8P05SM

OMO.#: OMO-RFD8P05SM-ON-SEMICONDUCTOR

MOSFET P-CH 50V 8A TO-252AA
RFD8P05SM9A

Mfr.#: RFD8P05SM9A

OMO.#: OMO-RFD8P05SM9A-1190

Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD8P06E

Mfr.#: RFD8P06E

OMO.#: OMO-RFD8P06E-1190

Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD8P06LE

Mfr.#: RFD8P06LE

OMO.#: OMO-RFD8P06LE-1190

Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD8P06LESM

Mfr.#: RFD8P06LESM

OMO.#: OMO-RFD8P06LESM-1190

8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD8P06LESM9A

Mfr.#: RFD8P06LESM9A

OMO.#: OMO-RFD8P06LESM9A-1190

- Bulk (Alt: RFD8P06LESM9A)
RFD8P06SM

Mfr.#: RFD8P06SM

OMO.#: OMO-RFD8P06SM-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di RFD8P03LSM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,00 USD
0,00 USD
10
0,00 USD
0,00 USD
100
0,00 USD
0,00 USD
500
0,00 USD
0,00 USD
1000
0,00 USD
0,00 USD
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