SIHB33N60E-E3

SIHB33N60E-E3
Mfr. #:
SIHB33N60E-E3
Produttore:
Vishay / Siliconix
Descrizione:
RF Bipolar Transistors MOSFET N-Channel 600V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB33N60E-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB33N60E-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB33N60E-E3
DISTI # SIHB33N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB33N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.5900
  • 2000:$3.3900
  • 4000:$3.2900
  • 6000:$3.1900
  • 10000:$3.0900
SIHB33N60E-GE3
DISTI # 78-SIHB33N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
1904
  • 1:$6.2200
  • 10:$5.1600
  • 100:$4.2400
  • 250:$4.1100
  • 500:$3.7100
  • 1000:$3.7000
SIHB33N60E-E3
DISTI # 78-SIHB33N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
0
  • 1000:$3.4700
  • 2000:$3.3000
SIHB33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas - 6300
    Immagine Parte # Descrizione
    SIHB33N60EF-GE3

    Mfr.#: SIHB33N60EF-GE3

    OMO.#: OMO-SIHB33N60EF-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB33N60ET1-GE3

    Mfr.#: SIHB33N60ET1-GE3

    OMO.#: OMO-SIHB33N60ET1-GE3

    MOSFET N-Channel 600V
    SIHB33N60E-GE3

    Mfr.#: SIHB33N60E-GE3

    OMO.#: OMO-SIHB33N60E-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB33N60E-E3

    Mfr.#: SIHB33N60E-E3

    OMO.#: OMO-SIHB33N60E-E3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB33N60EF-GE3

    Mfr.#: SIHB33N60EF-GE3

    OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

    IGBT Transistors MOSFET N-Channel 600V
    SIHB33N60E-E3

    Mfr.#: SIHB33N60E-E3

    OMO.#: OMO-SIHB33N60E-E3-317

    RF Bipolar Transistors MOSFET N-Channel 600V
    SIHB33N60ET1-GE3

    Mfr.#: SIHB33N60ET1-GE3

    OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

    RF Bipolar Transistors MOSFET N-Channel 600V
    SIHB33N60EF-GE3-CUT TAPE

    Mfr.#: SIHB33N60EF-GE3-CUT TAPE

    OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

    Nuovo e originale
    SIHB33N60E

    Mfr.#: SIHB33N60E

    OMO.#: OMO-SIHB33N60E-1190

    N-CH 600V 99mOhm 33A TO263
    SIHB33N60ET5-GE3

    Mfr.#: SIHB33N60ET5-GE3

    OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

    MOSFET N-CH 600V 33A TO263
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di SIHB33N60E-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    4,64 USD
    4,64 USD
    10
    4,40 USD
    44,03 USD
    100
    4,17 USD
    417,15 USD
    500
    3,94 USD
    1 969,90 USD
    1000
    3,71 USD
    3 708,00 USD
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