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SIHB33N60ET1-GE3

SIHB33N60ET1-GE3
Mfr. #:
SIHB33N60ET1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET N-Channel 600V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB33N60ET1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB33N60ET1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 33A TO263
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$3.6630
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK T/R - Bulk (Alt: SIHB33N60ET1-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 800:$3.1900
  • 1600:$3.0900
  • 3200:$2.9900
  • 4800:$2.8900
  • 8000:$2.7900
SIHB33N60ET1-GE3
DISTI # 78-SIHB33N60ET1-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 1:$6.2200
  • 10:$5.1600
  • 100:$4.2400
  • 250:$4.1100
  • 500:$3.6900
  • 800:$3.1100
  • 2400:$2.9600
Immagine Parte # Descrizione
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3

 MOSFET 600V Vds E Series D2PAK TO-263
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

 Nuovo e originale
SIHB33N60E

Mfr.#: SIHB33N60E

OMO.#: OMO-SIHB33N60E-1190

 N-CH 600V 99mOhm 33A TO263
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

 MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 33A TO263
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di SIHB33N60ET1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,18 USD
4,18 USD
10
3,98 USD
39,76 USD
100
3,77 USD
376,65 USD
500
3,56 USD
1 778,65 USD
1000
3,35 USD
3 348,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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