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IRF7779L2TRPBF

IRF7779L2TRPBF
Mfr. #:
IRF7779L2TRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7779L2TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Raddrizzatore internazionale
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Nome depositato
DirectFET
Pacchetto-Custodia
DirectFET-9
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Scarico esagonale a sorgente singolo ottale
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
125 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
19 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
67 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Rds-On-Drain-Source-Resistenza
9 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
36 ns
Tempo di ritardo all'accensione tipico
16 ns
Qg-Gate-Carica
11 nC
Modalità canale
Aumento
Tags
IRF777, IRF77, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®
***p One Stop Japan
Trans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:67A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Synchronous Rectification; Low Conduction Losses; High Cdv/dt Immunity | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
Parte # Mfg. Descrizione Azione Prezzo
IRF7779L2TRPBF
DISTI # V72:2272_13890689		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R888
  • 500:$2.9539
  • 250:$3.4000
  • 100:$3.5860
  • 25:$4.1120
  • 10:$4.1380
  • 1:$4.5920
IRF7779L2TRPBF
DISTI # V36:1790_13890689		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R0
  • 4000000:$2.1480
  • 2000000:$2.1490
  • 400000:$2.2270
  • 40000:$2.3420
  • 4000:$2.3600
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 1
Container: Cut Tape (CT)		4163In Stock
  • 1000:$2.6664
  • 500:$3.1616
  • 100:$3.7139
  • 10:$4.5330
  • 1:$5.0500
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 1
Container: Digi-Reel®		4163In Stock
  • 1000:$2.6664
  • 500:$3.1616
  • 100:$3.7139
  • 10:$4.5330
  • 1:$5.0500
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$2.4593
IRF7779L2TRPBF
DISTI # 32924199		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R4000
  • 200:$4.1437
  • 100:$4.4242
  • 50:$5.1765
  • 10:$5.2657
  • 5:$5.8395
IRF7779L2TRPBF
DISTI # 33139776		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R888
  • 500:$2.9539
  • 250:$3.4000
  • 100:$3.5860
  • 25:$4.1120
  • 10:$4.1380
  • 3:$4.5920
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Cut TR (SOS) (Alt: IRF7779L2TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2855
  • 68:$2.8017
  • 34:$2.8892
  • 17:$2.9824
  • 9:$3.0818
  • 5:$3.1881
  • 3:$3.3020
  • 1:$3.4243
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Tape and Reel (Alt: IRF7779L2TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 24000:$2.2900
  • 40000:$2.2900
  • 16000:$2.3900
  • 8000:$2.4900
  • 4000:$2.5900
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Bulk (Alt: IRF7779L2TRPBF)
Min Qty: 136
Container: Bulk		Americas - 0
  • 680:$2.2900
  • 1360:$2.2900
  • 408:$2.3900
  • 272:$2.4900
  • 136:$2.6900
IRF7779L2TRPBF
DISTI # SP001572314		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R (Alt: SP001572314)
Min Qty: 4000
Container: Tape and Reel		Europe - 0
    IRF7779L2TRPBF.
    DISTI # 26AC0645    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:67A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:125W,No. of Pins:15Pins RoHS Compliant: Yes
    RoHS: Compliant    		0
    • 24000:$2.2900
    • 16000:$2.3900
    • 8000:$2.4900
    • 1:$2.5900
    IRF7779L2TRPBF
    DISTI # 70019646    		Infineon Technologies AGMOSFET,150V,67A,11 MOHM,97NC QG
    RoHS: Not Compliant    		0
    • 4000:$7.1500
    IRF7779L2TRPBF
    DISTI # 942-IRF7779L2TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    RoHS: Compliant    		3686
    • 1:$4.8900
    • 10:$4.1600
    • 100:$3.6000
    • 250:$3.4200
    • 500:$3.0700
    • 1000:$2.5800
    • 4000:$2.3600
    IRF7779L2TRPBFInternational RectifierDirectFet Power MOSFET
    RoHS: Compliant    		18907
    • 1000:$2.4400
    • 500:$2.5700
    • 100:$2.6700
    • 25:$2.7900
    • 1:$3.0000
    IRF7779L2TRPBF
    DISTI # 1300957    		Infineon Technologies AGIRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon, EA
    Min Qty: 1
    Container: Bulk    		1465
    • 1:$3.2610
    IRF7779L2TRPBF
    DISTI # 2579995    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		5110
    • 1000:$3.8900
    • 500:$4.6300
    • 250:$5.1500
    • 100:$5.4300
    • 10:$6.2700
    • 1:$7.3700
    IRF7779L2TRPBF
    DISTI # 2579995    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		5135
    • 1000:£1.9800
    • 500:£2.5300
    • 250:£2.8200
    • 100:£2.9600
    • 10:£3.4200
    • 1:£4.4800
    IRF7779L2TRPBF
    DISTI # 2579995RL    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		0
    • 1000:£1.9800
    • 500:£2.5300
    • 250:£2.8200
    • 100:£2.9600
    • 10:£3.4200
    • 1:£4.4800
    Immagine Parte # Descrizione
    IRF7779L2TRPBF

    Mfr.#: IRF7779L2TRPBF

    OMO.#: OMO-IRF7779L2TRPBF

    		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    IRF7779L2TR1PBF

    Mfr.#: IRF7779L2TR1PBF

    OMO.#: OMO-IRF7779L2TR1PBF

    		 MOSFET 150V 67A 11mOhm 97nC Qg
    IRF7779L2TRPBF.

    Mfr.#: IRF7779L2TRPBF.

    OMO.#: OMO-IRF7779L2TRPBF--1190

    		 Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
    IRF7779L2TR1PBF

    Mfr.#: IRF7779L2TR1PBF

    OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
    IRF7779L2TRPBF

    Mfr.#: IRF7779L2TRPBF

    OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di IRF7779L2TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,44 USD
    3,44 USD
    10
    3,26 USD
    32,63 USD
    100
    3,09 USD
    309,15 USD
    500
    2,92 USD
    1 459,90 USD
    1000
    2,75 USD
    2 748,00 USD
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