IRF7779L2TR1PBF

IRF7779L2TR1PBF
Mfr. #:
IRF7779L2TR1PBF
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7779L2TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRF777, IRF77, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R
***Components
MOSFET N-Ch 150V 67A Direct-FET L8
***ment14 APAC
N CH MOSFET, 150V, 11A DIRECTFET L8
***ied Electronics & Automation
MOSFET; 150V, 67A, 11 MOHM, 97NC QG
***i-Key
MOSFET N-CH 150V 375A DIRECTFET
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5
Parte # Mfg. Descrizione Azione Prezzo
IRF7779L2TR1PBF
DISTI # IRF7779L2TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF7779L2TR1PBF
    DISTI # IRF7779L2TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF7779L2TR1PBF
      DISTI # IRF7779L2TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF7779L2TR1PBF
        DISTI # 70019645
        Infineon Technologies AGIRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8
        RoHS: Compliant
        0
        • 1000:$3.4300
        IRF7779L2TR1PBF
        DISTI # 942-IRF7779L2TR1PBF
        Infineon Technologies AGMOSFET 150V 67A 11mOhm 97nC Qg
        RoHS: Compliant
        0
          IRF7779L2TR1PBF
          DISTI # 1791559
          Infineon Technologies AGMOSFET, N CH, 150V, 67A, DIRECTFET L8
          RoHS: Compliant
          0
          • 1:$9.7600
          • 10:$5.9600
          • 100:$5.6700
          • 250:$5.3600
          • 500:$5.1700
          • 1000:$5.0000
          • 2000:$4.7900
          • 5000:$4.6600
          Immagine Parte # Descrizione
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF

          MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF

          MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF.

          Mfr.#: IRF7779L2TRPBF.

          OMO.#: OMO-IRF7779L2TRPBF--1190

          Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

          MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          Disponibilità
          Azione:
          Available
          Su ordine:
          4000
          Inserisci la quantità:
          Il prezzo attuale di IRF7779L2TR1PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          5,14 USD
          5,14 USD
          10
          4,89 USD
          48,88 USD
          100
          4,63 USD
          463,05 USD
          500
          4,37 USD
          2 186,65 USD
          1000
          4,12 USD
          4 116,00 USD
          A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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