FF200R33KF2C

FF200R33KF2C
Mfr. #:
FF200R33KF2C
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules 3300V 200A DUAL
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FF200R33KF2C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FF200R33KF2C maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
EUPEC
categoria di prodotto
Chip IC
Stile di montaggio
Vite
Pacchetto-Custodia
IHM 73X140-8
Configurazione
Dual
Pd-Power-Dissipazione
2.2 kW
Massima temperatura di esercizio
+ 125 C
Temperatura di esercizio minima
- 40 C
Collettore-Emettitore-Tensione-VCEO-Max
3300 V
Collettore-Emettitore-Saturazione-Tensione
3.4 V
Continuo-Collettore-Corrente-a-25-C
330 A
Gate-Emettitore-Corrente di dispersione
400 nA
Massima-tensione-gate-emettitore
+/- 20 V
Tags
FF200R33KF2C, FF200R3, FF200R, FF200, FF20, FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FF200R33KF2C IGBT2 IGBT Module
Infineon Technologies FF200R33KF2C IGBT Module offers a collector-emitter voltage of 3300V and a DC-collector current of 330A at 25ºC. The Infineon Technologies FF200R33KF2C IGBT2 Inverter's total power dissipation is 2.20kW and the gate-emitter peak voltage is +/-20V. The inverter is ideal for traction and industry applications.
Parte # Mfg. Descrizione Azione Prezzo
FF200R33KF2CNOSA1
DISTI # FF200R33KF2CNOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 200A
RoHS: Not compliant
Min Qty: 4
Container: Bulk
Temporarily Out of Stock
  • 4:$791.5000
FF200R33KF2C
DISTI # FF200R33KF2C
Infineon Technologies AGTrans IGBT Module N-CH 3.3KV 330A 8-pin IHV73-3 (Alt: FF200R33KF2C)
RoHS: Not Compliant
Min Qty: 4
Asia - 0
    FF200R33KF2CNOSA1
    DISTI # FF200R33KF2CNOSA1
    Infineon Technologies AGTRACTION - Trays (Alt: FF200R33KF2CNOSA1)
    RoHS: Not Compliant
    Min Qty: 4
    Container: Tray
    Americas - 0
    • 4:$866.6900
    • 8:$835.3900
    • 16:$805.1900
    • 24:$778.0900
    • 40:$764.2900
    FF200R33KF2CNOSA1
    DISTI # 13AC8642
    Infineon Technologies AGIGBT, MODULE, N-CH, 3.3KV, 330A,Transistor Polarity:N Channel,DC Collector Current:330A,Collector Emitter Saturation Voltage Vce(on):3.4V,Power Dissipation Pd:2.2kW,Collector Emitter Voltage V(br)ceo:3.3kV,No. of Pins:- RoHS Compliant: No0
      FF200R33KF2CNOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel
      RoHS: Not Compliant
      2
      • 1000:$824.4700
      • 500:$867.8700
      • 100:$903.5300
      • 25:$942.2600
      • 1:$1,014.7400
      FF200R33KF2C
      DISTI # 641-FF200R33KF2
      Infineon Technologies AGIGBT Modules 3300V 200A DUAL
      RoHS: Not compliant
      0
      • 1:$751.9200
      • 5:$739.9000
      FF200R33KF2CNOSA1
      DISTI # 2726126
      Infineon Technologies AGIGBT, MODULE, N-CH, 3.3KV, 330A
      RoHS: Not Compliant
      0
      • 1:$1,478.7000
      • 5:$1,425.8900
      FF200R33KF2CNOSA1
      DISTI # 2726126
      Infineon Technologies AGIGBT, MODULE, N-CH, 3.3KV, 330A
      RoHS: Not Compliant
      0
      • 1:£619.0000
      • 5:£607.0000
      Immagine Parte # Descrizione
      FF200R12KT3_E

      Mfr.#: FF200R12KT3_E

      OMO.#: OMO-FF200R12KT3-E

      IGBT Modules IGBT 1200V 200A
      FF200R12KE3

      Mfr.#: FF200R12KE3

      OMO.#: OMO-FF200R12KE3

      IGBT Modules 1200V 200A DUAL
      FF200R12KE3_B2

      Mfr.#: FF200R12KE3_B2

      OMO.#: OMO-FF200R12KE3-B2

      IGBT Modules N-CH 1.2KV 295A
      FF200R12MT4

      Mfr.#: FF200R12MT4

      OMO.#: OMO-FF200R12MT4-125

      IGBT Modules IGBT-MODULE
      FF200R06KE3

      Mfr.#: FF200R06KE3

      OMO.#: OMO-FF200R06KE3-125

      IGBT Modules N-CH 600V 260A
      FF200R17KE4

      Mfr.#: FF200R17KE4

      OMO.#: OMO-FF200R17KE4-125

      IGBT Modules IGBT Module 200A 1700V
      FF200R12KT4

      Mfr.#: FF200R12KT4

      OMO.#: OMO-FF200R12KT4-125

      IGBT Modules N-CH 1.2KV 320A
      FF200R12KES4

      Mfr.#: FF200R12KES4

      OMO.#: OMO-FF200R12KES4-1190

      Nuovo e originale
      FF200R12KT3 FF200R12KE3

      Mfr.#: FF200R12KT3 FF200R12KE3

      OMO.#: OMO-FF200R12KT3-FF200R12KE3-1190

      Nuovo e originale
      FF200R12KT3EHOSA1

      Mfr.#: FF200R12KT3EHOSA1

      OMO.#: OMO-FF200R12KT3EHOSA1-INFINEON-TECHNOLOGIES

      IGBT MODULE VCES 1200V 200A
      Disponibilità
      Azione:
      Available
      Su ordine:
      2500
      Inserisci la quantità:
      Il prezzo attuale di FF200R33KF2C è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,00 USD
      1,00 USD
      10
      1,00 USD
      10,00 USD
      100
      998,86 USD
      99 886,50 USD
      500
      943,37 USD
      471 686,25 USD
      1000
      887,88 USD
      887 880,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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