FF200R12MT4

FF200R12MT4
Mfr. #:
FF200R12MT4
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Modules IGBT-MODULE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FF200R12MT4 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Infineon
categoria di prodotto
Modulo
Prodotto
Moduli di silicio IGBT
Confezione
Scatola
Stile di montaggio
Vite
Pacchetto-Custodia
Econo D
Configurazione
Dual
Pd-Power-Dissipazione
1050 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Collettore-Emettitore-Tensione-VCEO-Max
1200 V
Collettore-Emettitore-Saturazione-Tensione
2.15 V
Continuo-Collettore-Corrente-a-25-C
295 A
Gate-Emettitore-Corrente di dispersione
400 nA
Massima-tensione-gate-emettitore
+/- 20 V
Tags
FF200R12, FF200R1, FF200R, FF200, FF20, FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2
***i-Key
IGBT MODULE VCES 1200V 200A
***omponent
Infineon power module
***et
MEDIUM POWER ECONO
***ineon
EconoDUAL 2 1200V dual IGBT module with fast trench/fieldstop IGBT4, Emitter Controlled 4 diode and NTC | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; induction-heating; welding
Parte # Mfg. Descrizione Azione Prezzo
FF200R12MT4BOMA1
DISTI # FF200R12MT4BOMA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 200A
RoHS: Not compliant
Min Qty: 14
Container: Bulk
Limited Supply - Call
    FF200R12MT4
    DISTI # FF200R12MT4
    Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2 - Bulk (Alt: FF200R12MT4)
    RoHS: Not Compliant
    Min Qty: 4
    Container: Bulk
    Americas - 0
    • 4:$54.2900
    • 6:$52.2900
    • 10:$50.3900
    • 20:$48.6900
    • 40:$47.7900
    FF200R12MT4BOMA1
    DISTI # FF200R12MT4BOMA1
    Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FF200R12MT4BOMA1)
    Min Qty: 4
    Container: Bulk
    Americas - 0
      FF200R12MT4
      DISTI # 641-FF200R12MT4
      Infineon Technologies AGIGBT Modules IGBT-MODULE
      RoHS: Compliant
      0
        FF200R12MT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel
        RoHS: Compliant
        147
        • 1000:$95.2900
        • 500:$100.3100
        • 100:$104.4300
        • 25:$108.9000
        • 1:$117.2800
        FF200R12MT4BOMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel
        RoHS: Compliant
        540
        • 1000:$87.3600
        • 500:$91.9500
        • 100:$95.7300
        • 25:$99.8400
        • 1:$107.5100
        Immagine Parte # Descrizione
        FF200R12KT3

        Mfr.#: FF200R12KT3

        OMO.#: OMO-FF200R12KT3

        IGBT Modules N-CH 1.2KV 295A
        FF200R12KT3_E

        Mfr.#: FF200R12KT3_E

        OMO.#: OMO-FF200R12KT3-E

        IGBT Modules IGBT 1200V 200A
        FF200R12KE3_B2

        Mfr.#: FF200R12KE3_B2

        OMO.#: OMO-FF200R12KE3-B2

        IGBT Modules N-CH 1.2KV 295A
        FF200R12KT3_E

        Mfr.#: FF200R12KT3_E

        OMO.#: OMO-FF200R12KT3-E-125

        IGBT Modules IGBT 1200V 200A
        FF200R06YE3

        Mfr.#: FF200R06YE3

        OMO.#: OMO-FF200R06YE3-125

        IGBT Modules IGBT 600V 200A
        FF200R12KE3_G

        Mfr.#: FF200R12KE3_G

        OMO.#: OMO-FF200R12KE3-G-1190

        Nuovo e originale
        FF200R12KT3 FF200R12KE3

        Mfr.#: FF200R12KT3 FF200R12KE3

        OMO.#: OMO-FF200R12KT3-FF200R12KE3-1190

        Nuovo e originale
        FF200R17KE3HOSA1

        Mfr.#: FF200R17KE3HOSA1

        OMO.#: OMO-FF200R17KE3HOSA1-INFINEON-TECHNOLOGIES

        IGBT MODULE 1700V 200A
        FF200R33KF2CNOSA1

        Mfr.#: FF200R33KF2CNOSA1

        OMO.#: OMO-FF200R33KF2CNOSA1-INFINEON-TECHNOLOGIES

        IGBT MODULE VCES 1200V 200A
        FF200R12KT3HOSA1

        Mfr.#: FF200R12KT3HOSA1

        OMO.#: OMO-FF200R12KT3HOSA1-INFINEON-TECHNOLOGIES

        Trench and Field Stop IGBT4un
        Disponibilità
        Azione:
        Available
        Su ordine:
        3500
        Inserisci la quantità:
        Il prezzo attuale di FF200R12MT4 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        142,94 USD
        142,94 USD
        10
        135,79 USD
        1 357,88 USD
        100
        128,64 USD
        12 864,15 USD
        500
        121,49 USD
        60 747,40 USD
        1000
        114,35 USD
        114 348,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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