We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMV07N70E DISTI # FE0000000001062 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 17A I(D),600V,0.4ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV07N70E-S25PP-P DISTI # FE0000000004691 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV07N70E-P DISTI # FE0000000004690 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FMV03N60E OMO.#: OMO-FMV03N60E-1190 |
Power Field-Effect Transistor, 3A I(D),600V,2.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
|
Mfr.#: FMV05N60E OMO.#: OMO-FMV05N60E-1190 |
Power Field-Effect Transistor, 5.5A I(D),600V,1.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
|
Mfr.#: FMV06N60E OMO.#: OMO-FMV06N60E-1190 |
Power Field-Effect Transistor, 6A I(D),600V,1.2ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
|
Mfr.#: FMV06N60ES OMO.#: OMO-FMV06N60ES-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV06N90E OMO.#: OMO-FMV06N90E-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV06N90ESC OMO.#: OMO-FMV06N90ESC-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV07N50E OMO.#: OMO-FMV07N50E-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV07N60S1 OMO.#: OMO-FMV07N60S1-1190 |
Nuovo e originale |
|
|
Mfr.#: FMV07N65E OMO.#: OMO-FMV07N65E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMV07N90E OMO.#: OMO-FMV07N90E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |