FMV07N65E

FMV07N65E
Mfr. #:
FMV07N65E
Produttore:
Fuji Electric Co Ltd
Descrizione:
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FMV07N65E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
FMV07N6, FMV07, FMV0, FMV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
FMV07N65E
DISTI # FE0000000001061
Fuji Electric Co LtdPower Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FMV07N65ESC-P
    DISTI # FE0000000004689
    Fuji Electric Co LtdMOSFET
    RoHS: Compliant
    0 in Stock0 on Order
      FMV07N65EHF-S25PP-P
      DISTI # FE0000000004688
      Fuji Electric Co LtdMOSFET
      RoHS: Compliant
      0 in Stock0 on Order
        FMV07N65E-S25PP-P
        DISTI # FE0000000004687
        Fuji Electric Co LtdMOSFET
        RoHS: Compliant
        0 in Stock0 on Order
          Immagine Parte # Descrizione
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          OMO.#: OMO-FMV05N50E-1190

          Nuovo e originale
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          Mfr.#: FMV05N60E

          OMO.#: OMO-FMV05N60E-1190

          Power Field-Effect Transistor, 5.5A I(D),600V,1.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB
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          OMO.#: OMO-FMV05N60E-TK6A60-1190

          Nuovo e originale
          FMV07N60S1

          Mfr.#: FMV07N60S1

          OMO.#: OMO-FMV07N60S1-1190

          Nuovo e originale
          FMV07N60S1HF

          Mfr.#: FMV07N60S1HF

          OMO.#: OMO-FMV07N60S1HF-1190

          Nuovo e originale
          FMV07N90E

          Mfr.#: FMV07N90E

          OMO.#: OMO-FMV07N90E-1190

          Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET
          FMV08N80E-FUJI

          Mfr.#: FMV08N80E-FUJI

          OMO.#: OMO-FMV08N80E-FUJI-1190

          Nuovo e originale
          FMV09N90E

          Mfr.#: FMV09N90E

          OMO.#: OMO-FMV09N90E-1190

          Nuovo e originale
          FMV001S107K

          Mfr.#: FMV001S107K

          OMO.#: OMO-FMV001S107K-700

          D-Sub Contacts SOCKET CONTACT
          Disponibilità
          Azione:
          Available
          Su ordine:
          5500
          Inserisci la quantità:
          Il prezzo attuale di FMV07N65E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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