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Parte # | Mfg. | Descrizione | Azione | Prezzo |
---|---|---|---|---|
FMV07N90E DISTI # FE0000000001063 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
FMV07N90ESC-P DISTI # FE0000000004693 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
FMV07N90E-S25PP-P DISTI # FE0000000004692 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
Immagine | Parte # | Descrizione |
---|---|---|
Mfr.#: FMV03N60E OMO.#: OMO-FMV03N60E-1190 |
Power Field-Effect Transistor, 3A I(D),600V,2.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB | |
Mfr.#: FMV05N50E OMO.#: OMO-FMV05N50E-1190 |
Nuovo e originale | |
Mfr.#: FMV06N60ES OMO.#: OMO-FMV06N60ES-1190 |
Nuovo e originale | |
Mfr.#: FMV06N90ESC OMO.#: OMO-FMV06N90ESC-1190 |
Nuovo e originale | |
Mfr.#: FMV07N60S1 OMO.#: OMO-FMV07N60S1-1190 |
Nuovo e originale | |
Mfr.#: FMV07N90E OMO.#: OMO-FMV07N90E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET | |
Mfr.#: FMV08N50E/08N50E OMO.#: OMO-FMV08N50E-08N50E-1190 |
Nuovo e originale | |
Mfr.#: FMV08N60GX OMO.#: OMO-FMV08N60GX-1190 |
Nuovo e originale | |
Mfr.#: FMV08N80E OMO.#: OMO-FMV08N80E-1190 |
Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET | |
Mfr.#: FMV09N90ESC-P OMO.#: OMO-FMV09N90ESC-P-1190 |
Nuovo e originale |