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SI7852DP-T1-E3

SI7852DP-T1-E3
Mfr. #:
SI7852DP-T1-E3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 80V 7.6A PPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7852DP-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI7852DP-E3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SO-8
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SO-8
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1.9W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
80V
Ingresso-Capacità-Ciss-Vds
-
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
7.6A (Ta)
Rds-On-Max-Id-Vgs
16.5 mOhm @ 10A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
Gate-Carica-Qg-Vgs
41nC @ 10V
Pd-Power-Dissipazione
1.9 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
11 ns
Ora di alzarsi
11 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
7.6 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Resistenza
16.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
40 ns
Tempo di ritardo all'accensione tipico
17 ns
Modalità canale
Aumento
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 16.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ied Electronics & Automation
TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R
***i-Key
MOSFET N-CH 80V 7.6A PPAK SO-8
***ser
N-Channel MOSFETs 80V 12.5A 5.2W
***
N-CHANNEL 80-V (D-S) MOS
***ponent Electronics
IC SMT ON TAPE
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:12.5A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:7.6A; Package / Case:PowerPAK SO-8; Power Dissipation Pd:1.9W; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:7.6A; Resistance, Rds On:10.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:50A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:41nC; No. of Pins:8; Power Dissipation:1.9W; Power, Pd:1.9W; Quantity, Reel:3000; Resistance, Rds on Max:0.0165ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25K; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:80V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2V; Width, External:6.2mm; Width, Tape:12mm
Parte # Mfg. Descrizione Azione Prezzo
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1000:$1.0616
  • 500:$1.2813
  • 100:$1.6474
  • 10:$2.0500
  • 1:$2.2700
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 12000
  • 3000:$1.1369
  • 6000:$1.1029
  • 12000:$1.0589
  • 18000:$1.0289
  • 30000:$1.0019
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-E3
    DISTI # 06J8172    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 06J8172)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$3.6700
    • 25:$3.0500
    • 50:$2.7100
    • 100:$2.3600
    • 250:$2.2200
    • 500:$2.0800
    • 1000:$1.7200
    SI7852DP-T1-E3
    DISTI # 29X0550    		Vishay IntertechnologiesMOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$1.5700
    • 3000:$1.5600
    • 6000:$1.4900
    • 12000:$1.3200
    SI7852DP-T1-E3
    DISTI # 06J8172    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 12.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.4300
    SI7852DP-T1-E3
    DISTI # 70026416    		Vishay SiliconixTRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R
    RoHS: Compliant    		0
    • 3000:$1.4600
    SI7852DP-T1-E3
    DISTI # 781-SI7852DP-E3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.4300
    • 3000:$1.3300
    • 6000:$1.2800
    SI7852DP-T1
    DISTI # 781-SI7852DP    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Not compliant    		0
      SI7852DP-T1-E3Vishay IntertechnologiesMOSFET Transistor, N-Channel, LLCC8
      • 2:$2.8500
      • 1:$3.8000
      SI7852DP-T1-E3Vishay IntertechnologiesMOSFET Transistor, N-Channel, LLCC4
      • 3:$1.9600
      • 1:$2.4500
      SI7852DP-T1-E3Vishay IntertechnologiesINSTOCK400
        SI7852DP-T1-E3
        DISTI # 1470137        		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
        RoHS: Compliant        		0
        • 1:£2.0200
        • 10:£1.6200
        • 100:£1.2900
        • 250:£1.1500
        • 500:£1.0100
        SI7852DP-T1-E3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
          SI7852DP-T1-E3
          DISTI # 1470137          		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
          RoHS: Compliant          		0
          • 1:$3.7100
          • 10:$3.3500
          • 100:$2.6900
          • 500:$2.0900
          • 1000:$1.7400
          SI7852DP-T1-E3
          DISTI # 1470137RL          		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
          RoHS: Compliant          		0
          • 1:$3.7100
          • 10:$3.3500
          • 100:$2.6900
          • 500:$2.0900
          • 1000:$1.7400
          Immagine Parte # Descrizione
          SI7852DP-T1-E3

          Mfr.#: SI7852DP-T1-E3

          OMO.#: OMO-SI7852DP-T1-E3

          		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
          SI7852DP-T1-GE3

          Mfr.#: SI7852DP-T1-GE3

          OMO.#: OMO-SI7852DP-T1-GE3

          		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
          SI7852DP-T1-GE3

          Mfr.#: SI7852DP-T1-GE3

          OMO.#: OMO-SI7852DP-T1-GE3-VISHAY

          		 RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
          SI7852DP

          Mfr.#: SI7852DP

          OMO.#: OMO-SI7852DP-1190

          		 Nuovo e originale
          SI7852DP-T1

          Mfr.#: SI7852DP-T1

          OMO.#: OMO-SI7852DP-T1-1190

          		 MOSFET RECOMMENDED ALT 781-SI7852DP-E3
          SI7852DP-T1-E3

          Mfr.#: SI7852DP-T1-E3

          OMO.#: OMO-SI7852DP-T1-E3-VISHAY

          		 MOSFET N-CH 80V 7.6A PPAK SO-8
          SI7852DP-T1-E3.

          Mfr.#: SI7852DP-T1-E3.

          OMO.#: OMO-SI7852DP-T1-E3--1190

          		 Nuovo e originale
          SI7852DP-TI-E3

          Mfr.#: SI7852DP-TI-E3

          OMO.#: OMO-SI7852DP-TI-E3-1190

          		 Nuovo e originale
          SI7852DPT1

          Mfr.#: SI7852DPT1

          OMO.#: OMO-SI7852DPT1-1190

          		 Nuovo e originale
          Disponibilità
          Azione:
          Available
          Su ordine:
          2000
          Inserisci la quantità:
          Il prezzo attuale di SI7852DP-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          1,55 USD
          1,55 USD
          10
          1,47 USD
          14,72 USD
          100
          1,40 USD
          139,50 USD
          500
          1,32 USD
          658,75 USD
          1000
          1,24 USD
          1 240,00 USD
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