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SI7852DP-T1-GE3

SI7852DP-T1-GE3
Mfr. #:
SI7852DP-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7852DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Confezione
Bobina
Alias ​​parziali
SI7852DP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
1.9 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
31 ns
Ora di alzarsi
11 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
7.6 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Resistenza
16.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
40 ns
Tempo di ritardo all'accensione tipico
17 ns
Modalità canale
Aumento
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ark
N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descrizione Azione Prezzo
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.5508
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-GE3
    DISTI # SI7852DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2189
    • 6000:$1.1829
    • 12000:$1.1349
    • 18000:$1.1029
    • 30000:$1.0739
    SI7852DP-T1-GE3
    DISTI # 84R8079    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 7.6A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.6500
    SI7852DP-T1-GE3
    DISTI # 15R5226    		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.9W RoHS Compliant: Yes0
    • 1:$1.6700
    • 2000:$1.5900
    • 4000:$1.4900
    • 8000:$1.3800
    • 12000:$1.3300
    • 20000:$1.3100
    SI7852DP-T1-GE3
    DISTI # 781-SI7852DP-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.6500
    • 3000:$1.6400
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:$4.8500
    • 10:$4.0300
    • 100:$3.1200
    • 500:$2.7500
    • 1000:$2.6200
    • 3000:$2.6000
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:£2.6600
    • 10:£1.9600
    • 100:£1.5100
    • 250:£1.4200
    • 500:£1.3300
    SI7852DP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
      Immagine Parte # Descrizione
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
      SI7852DP

      Mfr.#: SI7852DP

      OMO.#: OMO-SI7852DP-1190

      		 Nuovo e originale
      SI7852DP-T1

      Mfr.#: SI7852DP-T1

      OMO.#: OMO-SI7852DP-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI7852DP-E3
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3-VISHAY

      		 MOSFET N-CH 80V 7.6A PPAK SO-8
      SI7852DP-T1-E3.

      Mfr.#: SI7852DP-T1-E3.

      OMO.#: OMO-SI7852DP-T1-E3--1190

      		 Nuovo e originale
      SI7852DP-TI-E3

      Mfr.#: SI7852DP-TI-E3

      OMO.#: OMO-SI7852DP-TI-E3-1190

      		 Nuovo e originale
      SI7852DPT1

      Mfr.#: SI7852DPT1

      OMO.#: OMO-SI7852DPT1-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SI7852DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
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      Prezzo unitario
      est. Prezzo
      1
      1,61 USD
      1,61 USD
      10
      1,53 USD
      15,30 USD
      100
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      144,98 USD
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      1,37 USD
      684,60 USD
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      1,29 USD
      1 288,70 USD
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