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SI7852DP-T1-GE3

SI7852DP-T1-GE3
Mfr. #:
SI7852DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7852DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7852DP-T1-GE3 DatasheetSI7852DP-T1-GE3 Datasheet (P4-P6)SI7852DP-T1-GE3 Datasheet (P7-P9)SI7852DP-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI7
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SI7852DP-GE3
Unità di peso:
0.017870 oz
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ark
N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descrizione Azione Prezzo
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.5508
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-GE3
    DISTI # SI7852DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2189
    • 6000:$1.1829
    • 12000:$1.1349
    • 18000:$1.1029
    • 30000:$1.0739
    SI7852DP-T1-GE3
    DISTI # 84R8079    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 7.6A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.6500
    SI7852DP-T1-GE3
    DISTI # 15R5226    		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.9W RoHS Compliant: Yes0
    • 1:$1.6700
    • 2000:$1.5900
    • 4000:$1.4900
    • 8000:$1.3800
    • 12000:$1.3300
    • 20000:$1.3100
    SI7852DP-T1-GE3
    DISTI # 781-SI7852DP-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.6500
    • 3000:$1.6400
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:$4.8500
    • 10:$4.0300
    • 100:$3.1200
    • 500:$2.7500
    • 1000:$2.6200
    • 3000:$2.6000
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:£2.6600
    • 10:£1.9600
    • 100:£1.5100
    • 250:£1.4200
    • 500:£1.3300
    SI7852DP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
      Immagine Parte # Descrizione
      CMPD2003C TR

      Mfr.#: CMPD2003C TR

      OMO.#: OMO-CMPD2003C-TR

      		 Diodes - General Purpose, Power, Switching Dual HV Switching
      SIHF640S-GE3

      Mfr.#: SIHF640S-GE3

      OMO.#: OMO-SIHF640S-GE3

      		 MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
      CRCW08051M00FKEAC

      Mfr.#: CRCW08051M00FKEAC

      OMO.#: OMO-CRCW08051M00FKEAC

      		 Thick Film Resistors - SMD 1/8Watt 1Mohms 1% Commercial Use
      CRCW060310K0JNEBC

      Mfr.#: CRCW060310K0JNEBC

      OMO.#: OMO-CRCW060310K0JNEBC

      		 Thick Film Resistors - SMD 1/10Watt 10Kohms 5% Commercial Use
      RC0603FR-132K4L

      Mfr.#: RC0603FR-132K4L

      OMO.#: OMO-RC0603FR-132K4L-433

      		 Res Thick Film 0603 2.4K Ohm 1% 0.1W(1/10W) ±100ppm/C Molded SMD Paper T/R
      CRCW08051M00FKEAC

      Mfr.#: CRCW08051M00FKEAC

      OMO.#: OMO-CRCW08051M00FKEAC-VISHAY-DALE

      		 D12/CRCW0805-C 100 1M0 1% ET1
      CRCW0603100RFKEAC

      Mfr.#: CRCW0603100RFKEAC

      OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE

      		 D11/CRCW0603-C 100 100R 1% ET1
      CRCW060310K0JNEBC

      Mfr.#: CRCW060310K0JNEBC

      OMO.#: OMO-CRCW060310K0JNEBC-VISHAY-DALE

      		 D11/CRCW0603-C 200 10K 5% ET5
      CRCW08050000Z0EBC

      Mfr.#: CRCW08050000Z0EBC

      OMO.#: OMO-CRCW08050000Z0EBC-VISHAY-DALE

      		 RES SMD 0 OHM JUMP 1/8W 0805
      CMPD2003C TR

      Mfr.#: CMPD2003C TR

      OMO.#: OMO-CMPD2003C-TR-CENTRAL-SEMICONDUCTOR

      		 Diodes - General Purpose, Power, Switching Dual HV Switching
      Disponibilità
      Azione:
      Available
      Su ordine:
      1985
      Inserisci la quantità:
      Il prezzo attuale di SI7852DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,96 USD
      2,96 USD
      10
      2,45 USD
      24,50 USD
      100
      2,02 USD
      202,00 USD
      250
      1,96 USD
      490,00 USD
      500
      1,75 USD
      875,00 USD
      1000
      1,48 USD
      1 480,00 USD
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