SI4952DY-T1-GE3

SI4952DY-T1-GE3
Mfr. #:
SI4952DY-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4952DY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4952DY-T1-GE3 DatasheetSI4952DY-T1-GE3 Datasheet (P4-P6)SI4952DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI4
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Parte # Alias:
SI4952DY-GE3
Unità di peso:
0.006596 oz
Tags
SI4952DY-T, SI4952D, SI4952, SI495, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 25V 8A 8-SOIC
***ark
Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:1.8W ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
SI4952DY-T1-GE3
DISTI # SI4952DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4952DY-T1-GE3
    DISTI # 781-SI4952DY-T1-GE3
    Vishay IntertechnologiesMOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
    RoHS: Compliant
    0
      Immagine Parte # Descrizione
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3-VISHAY

      RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
      SI4952DY

      Mfr.#: SI4952DY

      OMO.#: OMO-SI4952DY-1190

      Nuovo e originale
      SI4952DY-T1

      Mfr.#: SI4952DY-T1

      OMO.#: OMO-SI4952DY-T1-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SI4952DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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