NE3512S02-T1C-A

NE3512S02-T1C-A
Mfr. #:
NE3512S02-T1C-A
Produttore:
CEL
Descrizione:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE3512S02-T1C-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3512S02-T1C-A DatasheetNE3512S02-T1C-A Datasheet (P4-P6)NE3512S02-T1C-A Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
CEL
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
HFET
Tecnologia:
GaAs
Guadagno:
13.5 dB
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
4 V
Vgs - Tensione di rottura gate-source:
- 3 V
Id - Corrente di scarico continua:
70 mA
Temperatura massima di esercizio:
+ 125 C
Pd - Dissipazione di potenza:
165 mW
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
S0-2
Confezione:
Bobina
Frequenza operativa:
12 GHz
Prodotto:
RF JFET
Tipo:
GaAs HFET
Marca:
CEL
Transconduttanza diretta - Min:
55 mS
NF - Figura di rumore:
0.35 dB
Tipologia di prodotto:
Transistor RF JFET
Quantità confezione di fabbrica:
2000
sottocategoria:
transistor
Tags
NE3512S02-T, NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans RF MOSFET N-CH 4V 0.07A 4-Pin Case S-02 T/R / HJ-FET NCH 13.5DB S02
***ical
Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R
Parte # Mfg. Descrizione Azione Prezzo
NE3512S02-T1C-A
DISTI # NE3512S02-T1C-ATR-ND
California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3512S02-T1C-A
    DISTI # NE3512S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3512S02-T1C-A
      DISTI # NE3512S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3512S02-T1C-ARenesas Electronics Corporation 
        RoHS: Not Compliant
        8000
        • 1000:$0.5900
        • 500:$0.6200
        • 100:$0.6500
        • 25:$0.6800
        • 1:$0.7300
        NE3512S02-T1C-A
        DISTI # 551-NE3512S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant
        0
          Immagine Parte # Descrizione
          NE3512S02-T1C-A

          Mfr.#: NE3512S02-T1C-A

          OMO.#: OMO-NE3512S02-T1C-A

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          NE3512S02-T1D-A

          Mfr.#: NE3512S02-T1D-A

          OMO.#: OMO-NE3512S02-T1D-A-318

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          NE3512S02-A

          Mfr.#: NE3512S02-A

          OMO.#: OMO-NE3512S02-A-CEL

          RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
          NE3512S02-T1C-A

          Mfr.#: NE3512S02-T1C-A

          OMO.#: OMO-NE3512S02-T1C-A-CEL

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          NE3512S02-T1D-AJT

          Mfr.#: NE3512S02-T1D-AJT

          OMO.#: OMO-NE3512S02-T1D-AJT-1190

          Nuovo e originale
          NE3512S02

          Mfr.#: NE3512S02

          OMO.#: OMO-NE3512S02-1190

          Nuovo e originale
          NE3512S02-T1

          Mfr.#: NE3512S02-T1

          OMO.#: OMO-NE3512S02-T1-1190

          Nuovo e originale
          NE3512S02-T1B

          Mfr.#: NE3512S02-T1B

          OMO.#: OMO-NE3512S02-T1B-1190

          Nuovo e originale
          NE3512S02-T1C

          Mfr.#: NE3512S02-T1C

          OMO.#: OMO-NE3512S02-T1C-1190

          Nuovo e originale
          NE3512S02-T1D-A/JT

          Mfr.#: NE3512S02-T1D-A/JT

          OMO.#: OMO-NE3512S02-T1D-A-JT-1190

          Nuovo e originale
          Disponibilità
          Azione:
          Available
          Su ordine:
          3000
          Inserisci la quantità:
          Il prezzo attuale di NE3512S02-T1C-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Iniziare con
          Prodotti più recenti
          • MeshConnect™ EM357 USB Sticks
            MeshConnect EM357 USB sticks utilize Silicon Lab’s EmberZNet PRO™ stack, enabling monitoring and control for devices with USB 2.0 port connectivity.
          • MIOC3 / MIOC4 Eco Series Mini Optical Circulators
            Oplink’s polarization insensitive miniature circulator features excellent optical characteristics over a wide wavelength range while delivering the smallest form factor.
          • High Accuracy Absolute Pressure Sensor
            Featuring a low noise 24-bit analog to digital converter with digital control and output via I2C interface this unit will power down non-working circuits.
          • M12 Push-In Connectors
            Phoenix Contact's M12 push-in connectors offer the flexibility of accepting both ferruled and stranded wires in a tool-free connection option.
          • Compare NE3512S02-T1C-A
            NE3512S02T1 vs NE3512S02T1B vs NE3512S02T1C
          • High Current MOSFET Relay
            Omron now offers a MOSFET Relay capable of switching 1.7 amps in a 4 pin SOP package.
          Top