NE3512S02-T1D-A

NE3512S02-T1D-A
Mfr. #:
NE3512S02-T1D-A
Produttore:
Rochester Electronics, LLC
Descrizione:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE3512S02-T1D-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
RENESAS
categoria di prodotto
Chip IC
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
S0-2
Tecnologia
GaAs
Tipo a transistor
HFET
Guadagno
13.5 dB
Pd-Power-Dissipazione
165 mW
Massima temperatura di esercizio
+ 125 C
Frequenza operativa
12 GHz
Id-Continuo-Scarico-Corrente
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Polarità del transistor
Canale N
Transconduttanza diretta-Min
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Figura di rumore NF
0.35 dB
Tags
NE3512S02-T1D-A, NE3512S02-T1D, NE3512S02-T, NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
***S
new, original packaged
***i-Key
HJ-FET NCH 13.5DB S02
Parte # Mfg. Descrizione Azione Prezzo
NE3512S02-T1D-A
DISTI # 551-NE3512S02-T1D-A
California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
RoHS: Compliant
0
    Immagine Parte # Descrizione
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-A

    Mfr.#: NE3512S02-A

    OMO.#: OMO-NE3512S02-A

    RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    NE3512S02-T1D-A

    Mfr.#: NE3512S02-T1D-A

    OMO.#: OMO-NE3512S02-T1D-A-318

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A-CEL

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1D-AJT

    Mfr.#: NE3512S02-T1D-AJT

    OMO.#: OMO-NE3512S02-T1D-AJT-1190

    Nuovo e originale
    NE3512S02

    Mfr.#: NE3512S02

    OMO.#: OMO-NE3512S02-1190

    Nuovo e originale
    NE3512S02-T1

    Mfr.#: NE3512S02-T1

    OMO.#: OMO-NE3512S02-T1-1190

    Nuovo e originale
    NE3512S02-T1B

    Mfr.#: NE3512S02-T1B

    OMO.#: OMO-NE3512S02-T1B-1190

    Nuovo e originale
    NE3512S02-T1C

    Mfr.#: NE3512S02-T1C

    OMO.#: OMO-NE3512S02-T1C-1190

    Nuovo e originale
    NE3512S02-T1D-A/JT

    Mfr.#: NE3512S02-T1D-A/JT

    OMO.#: OMO-NE3512S02-T1D-A-JT-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
    Il prezzo attuale di NE3512S02-T1D-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,88 USD
    0,88 USD
    10
    0,84 USD
    8,41 USD
    100
    0,80 USD
    79,65 USD
    500
    0,75 USD
    376,15 USD
    1000
    0,71 USD
    708,00 USD
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