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IRF8788PBF

IRF8788PBF
Mfr. #:
IRF8788PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF8788PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8788PBF DatasheetIRF8788PBF Datasheet (P4-P6)IRF8788PBF Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
24 A
Rds On - Resistenza Drain-Source:
3.8 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
44 nC
Pd - Dissipazione di potenza:
2.5 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
95
sottocategoria:
MOSFET
Parte # Alias:
SP001566558
Unità di peso:
0.019048 oz
Tags
IRF878, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ical
Trans MOSFET N-CH 30V 24A 8-Pin SOIC Tube
***ment14 APAC
MOSFET, N-CH, 30V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:24mA; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:190A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
Parte # Mfg. Descrizione Azione Prezzo
IRF8788PBF
DISTI # IRF8788PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 24A 8-SO
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8788PBF
    DISTI # SP001566558    		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC (Alt: SP001566558)
    RoHS: Compliant
    Min Qty: 1    		Europe - 2600
    • 1000:€0.6119
    • 500:€0.6229
    • 100:€0.6399
    • 50:€0.6529
    • 25:€0.7499
    • 10:€0.8969
    • 1:€1.0699
    IRF8788PBF
    DISTI # IRF8788PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin SOIC - Bulk (Alt: IRF8788PBF)
    RoHS: Compliant
    Min Qty: 658
    Container: Bulk    		Americas - 0
    • 6580:$0.4829
    • 3290:$0.4919
    • 1974:$0.5119
    • 1316:$0.5319
    • 658:$0.5539
    IRF8788PBF
    DISTI # 71P2183    		Infineon Technologies AGMOSFET Transistor, N Channel, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V RoHS Compliant: Yes0
      IRF8788PBFInternational RectifierPower Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
      RoHS: Compliant      		64
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      IRF8788PBF
      DISTI # 1688582      		Infineon Technologies AGMOSFET, N-CH, 30V, SO8
      RoHS: Compliant      		0
      • 10000:$1.3100
      • 2500:$1.4100
      • 1000:$1.5200
      • 500:$1.7300
      • 100:$2.0600
      • 10:$2.6300
      • 1:$3.1800
      IRF8788PBF
      DISTI # IRF8788PBF      		Infineon Technologies AGN-Ch 30V 24A 2,5W 0,0028R SO8
      RoHS: Compliant      		190
      • 19:€0.7740
      • 190:€0.6140
      • 570:€0.5740
      • 1045:€0.5530
      IRF8788TRPBF
      DISTI # IRF8788PBF-GURT      		Infineon Technologies AGN-Ch 30V 24A 2,5W 0,0028R SO8
      RoHS: Compliant      		4000
      • 50:€0.4395
      • 100:€0.3795
      • 500:€0.3495
      • 2000:€0.3366
      Immagine Parte # Descrizione
      IRF8736PBF

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      IRF8721PBF

      Mfr.#: IRF8721PBF

      OMO.#: OMO-IRF8721PBF

      		 MOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC
      IRF8707G

      Mfr.#: IRF8707G

      OMO.#: OMO-IRF8707G-1190

      		 Nuovo e originale
      IRF8707GTRPBF

      Mfr.#: IRF8707GTRPBF

      OMO.#: OMO-IRF8707GTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 11A 8-SOIC
      IRF8707TRPBF-1

      Mfr.#: IRF8707TRPBF-1

      OMO.#: OMO-IRF8707TRPBF-1-1190

      		 Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8707TRPBF-1)
      IRF8714BF

      Mfr.#: IRF8714BF

      OMO.#: OMO-IRF8714BF-1190

      		 Nuovo e originale
      IRF8714TRPBF

      Mfr.#: IRF8714TRPBF

      OMO.#: OMO-IRF8714TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A 8-SOIC
      IRF8721GTRPBF

      Mfr.#: IRF8721GTRPBF

      OMO.#: OMO-IRF8721GTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A 8-SOIC
      IRF8736TEPBF

      Mfr.#: IRF8736TEPBF

      OMO.#: OMO-IRF8736TEPBF-1190

      		 Nuovo e originale
      IRF8788PBF

      Mfr.#: IRF8788PBF

      OMO.#: OMO-IRF8788PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.8mOhms 44nC
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di IRF8788PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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