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IRF8707GTRPBF

IRF8707GTRPBF
Mfr. #:
IRF8707GTRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 30V 11A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF8707GTRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRF8707GTRPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Bobina
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
4.4 ns
Ora di alzarsi
7.9 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
11 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.8 V
Rds-On-Drain-Source-Resistenza
14.2 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
7.3 ns
Tempo di ritardo all'accensione tipico
6.7 ns
Qg-Gate-Carica
6.2 nC
Transconduttanza diretta-Min
25 S
Tags
IRF8707G, IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF8707GTRPBF
DISTI # V72:2272_13891194		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 25:$0.3711
  • 10:$0.4123
  • 1:$0.5034
IRF8707GTRPBF
DISTI # IRF8707GTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		16391In Stock
  • 1000:$0.2387
  • 500:$0.3024
  • 100:$0.4044
  • 10:$0.5320
  • 1:$0.6300
IRF8707GTRPBF
DISTI # IRF8707GTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		12000In Stock
  • 4000:$0.2132
IRF8707GTRPBF
DISTI # 30150658		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 3000:$0.1648
  • 1000:$0.1832
  • 500:$0.2039
  • 250:$0.2266
  • 100:$0.2517
  • 56:$0.3711
IRF8707GTRPBF
DISTI # IRF8707GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8707GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1289
  • 8000:$0.1249
  • 16000:$0.1199
  • 24000:$0.1159
  • 40000:$0.1139
IRF8707GTRPBF
DISTI # SP001566566		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin SOIC T/R (Alt: SP001566566)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2569
  • 8000:€0.1999
  • 16000:€0.1629
  • 24000:€0.1379
  • 40000:€0.1279
IRF8707GTRPBF
DISTI # 91Y4759		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0093ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1269
  • 1:$0.5300
  • 10:$0.4340
  • 25:$0.3780
  • 50:$0.3210
  • 100:$0.2650
  • 250:$0.2450
  • 500:$0.2250
  • 1000:$0.2050
IRF8707GTRPBF
DISTI # 70019208		Infineon Technologies AGMOSFET,30V,11A,11.9 MOHM,6.2 NC QG,SO-8,HALOGEN-FREE
RoHS: Compliant		0
  • 4000:$0.5300
IRF8707GTRPBF
DISTI # 942-IRF8707GTRPBF		Infineon Technologies AGMOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
RoHS: Compliant		8602
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 4000:$0.1740
IRF8707GTRPBFInternational Rectifier 1569
    IRF8707GTRPBF
    DISTI # 8655774P    		Infineon Technologies AGMOSFET N-CH 30V 11A HEXFET SOIC8, RL4350
    • 125:£0.2410
    IRF8707GTRPBFInternational RectifierINSTOCK3452
      IRF8707GTRPBF
      DISTI # C1S322000487040      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R
      RoHS: Compliant      		4000
      • 250:$0.2266
      • 100:$0.2517
      • 25:$0.3711
      • 10:$0.4123
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1248
      • 5:£0.3790
      • 25:£0.3570
      • 100:£0.2040
      • 250:£0.1810
      • 500:£0.1580
      IRF8707GTRPBF
      DISTI # 2579998      		Infineon Technologies AGMOSFET, N-CH, 30V, 11A, SOIC-8
      RoHS: Compliant      		1229
      • 1:$0.9660
      • 10:$0.8080
      • 100:$0.6060
      • 500:$0.4440
      • 1000:$0.3430
      Immagine Parte # Descrizione
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF

      		 MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg
      IRF8707GTRPBF

      Mfr.#: IRF8707GTRPBF

      OMO.#: OMO-IRF8707GTRPBF

      		 MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
      IRF8707PBF

      Mfr.#: IRF8707PBF

      OMO.#: OMO-IRF8707PBF

      		 MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
      IRF8707GPBF

      Mfr.#: IRF8707GPBF

      OMO.#: OMO-IRF8707GPBF

      		 MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC
      IRF8707TRPBF-CUT TAPE

      Mfr.#: IRF8707TRPBF-CUT TAPE

      OMO.#: OMO-IRF8707TRPBF-CUT-TAPE-1190

      		 Nuovo e originale
      IRF8707

      Mfr.#: IRF8707

      OMO.#: OMO-IRF8707-1190

      		 INTSTOCK
      IRF8707GTRPBF

      Mfr.#: IRF8707GTRPBF

      OMO.#: OMO-IRF8707GTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 11A 8-SOIC
      IRF8707PBF-1

      Mfr.#: IRF8707PBF-1

      OMO.#: OMO-IRF8707PBF-1-1190

      		 Nuovo e originale
      IRF8707TRPB

      Mfr.#: IRF8707TRPB

      OMO.#: OMO-IRF8707TRPB-1190

      		 Nuovo e originale
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 11A 8-SOIC
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
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      Il prezzo attuale di IRF8707GTRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
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      Prezzo unitario
      est. Prezzo
      1
      0,17 USD
      0,17 USD
      10
      0,16 USD
      1,62 USD
      100
      0,15 USD
      15,38 USD
      500
      0,15 USD
      72,60 USD
      1000
      0,14 USD
      136,70 USD
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