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| PartNumber | IRF8707GTRPBF | IRF8707GPBF |
| Description | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 11 A | 11 A |
| Rds On Drain Source Resistance | 14.2 mOhms | 17.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 6.2 nC | 6.2 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 25 S | - |
| Fall Time | 4.4 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.9 ns | - |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7.3 ns | - |
| Typical Turn On Delay Time | 6.7 ns | - |
| Part # Aliases | SP001566566 | SP001575436 |
| Unit Weight | 0.017870 oz | 0.019048 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8707GTRPBF | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | |
| IRF8707GPBF | MOSFET N-CH 30V 11A 8-SOIC | ||
| IRF8707GTRPBF | MOSFET N-CH 30V 11A 8-SOIC | ||
Infineon / IR |
IRF8707GPBF | MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC | |
| IRF8707G | Nuovo e originale |