SIE882DF-T1-GE3

SIE882DF-T1-GE3
Mfr. #:
SIE882DF-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 25V Vds 20V Vgs PolarPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIE882DF-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE882DF-T1-GE3 DatasheetSIE882DF-T1-GE3 Datasheet (P4-P6)SIE882DF-T1-GE3 Datasheet (P7-P9)SIE882DF-T1-GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SIE882DF-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Nome depositato:
TrenchFET, PolarPAK
Confezione:
Bobina
Serie:
SIE
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIE882DF-GE3
Tags
SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 25V 60A 10POLARPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descrizione Azione Prezzo
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 25V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.2028
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE882DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SIE882DF-T1-GE3
DISTI # 781-SIE882DF-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
0
  • 1:$2.5200
  • 10:$2.1000
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.3600
  • 3000:$1.3500
SIE882DF-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
Americas - 3000
  • 3000:$1.1210
  • 6000:$1.0590
  • 12000:$1.0270
  • 24000:$1.0110
Immagine Parte # Descrizione
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3

MOSFET 25V Vds 20V Vgs PolarPAK
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di SIE882DF-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,51 USD
2,51 USD
10
2,09 USD
20,90 USD
100
1,62 USD
162,00 USD
500
1,41 USD
705,00 USD
1000
1,17 USD
1 170,00 USD
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