SIE882DF-T1-GE3

SIE882DF-T1-GE3
Mfr. #:
SIE882DF-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIE882DF-T1-GE3 Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
SIE882DF-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
TrenchFET
Confezione
Bobina
Alias ​​parziali
SIE882DF-GE3
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PolarPAK-10
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
125 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
229 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.2 V
Rds-On-Drain-Source-Resistenza
1.4 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
46 nC
Transconduttanza diretta-Min
125 S
Tags
SIE8, SIE
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 25V 60A 10POLARPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descrizione Azione Prezzo
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 25V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.2028
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE882DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SIE882DF-T1-GE3
DISTI # 781-SIE882DF-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
0
  • 1:$2.5200
  • 10:$2.1000
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.3600
  • 3000:$1.3500
SIE882DF-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
Americas - 3000
  • 3000:$1.1210
  • 6000:$1.0590
  • 12000:$1.0270
  • 24000:$1.0110
Immagine Parte # Descrizione
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3

MOSFET 25V Vds 20V Vgs PolarPAK
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di SIE882DF-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,52 USD
1,52 USD
10
1,44 USD
14,41 USD
100
1,36 USD
136,49 USD
500
1,29 USD
644,50 USD
1000
1,21 USD
1 213,20 USD
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