SI3477DV-T1-GE3

Mfr. #:: SI3477DV-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -12V Vds 10V Vgs TSOP-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3477DV-T1-GE3 Scheda dati
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HTML Datasheet:: SI3477DV-T1-GE3 Datasheet SI3477DV-T1-GE3 Datasheet (P4-P6)SI3477DV-T1-GE3 Datasheet (P7-P9)SI3477DV-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:: SI3477DV-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TSOP-6

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 12 V

Id - Corrente di scarico continua:: 8 A

Rds On - Resistenza Drain-Source:: 17.5 mOhms

Vgs th - Tensione di soglia gate-source:: 1 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 90 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 4.2 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Altezza:: 1.1 mm

Lunghezza:: 3.05 mm

Serie:: SI3

Larghezza:: 1.65 mm

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 30 S

Tempo di caduta:: 35 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 30 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 65 ns

Tempo di ritardo di accensione tipico:: 25 ns

Parte # Alias:: SI3477DV-GE3

Unità di peso:: 0.000705 oz

Tags: SI347, SI34, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3477DV-T1-GE3 Descrizione

***ied Electronics & Automation: SI3477DV-T1-GE3 P-channel MOSFET Transistor; 8 A; 12 V; 6-Pin TSOP

***Components: In a Pack of 20, P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP Vishay SI3477DV-T1-GE3

***ure Electronics: Single P-Channel 12 V 0.0175 O Surface Mount Power Mosfet - TSOP-6

***et Europe: Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R

***C: Trans MOSFET P-CH 12V 8A 6-Pin TSOP

***i-Key: MOSFET P-CH 12V 8A 6-TSOP

***: P-CHANNEL 12-V (D-S)

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400Mv; Power Dissipation Pd:4.2W; No. Of Pins:6Pinsrohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, P-CH, -12V, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:4.2W; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-P, -12V, -8A, TSOP; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-8A; Tensione Drain Source Vds:-12V; Resistenza di Attivazione Rds(on):0.014ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-1V; Dissipazione di Potenza Pd:4.2W; Modello Case Transistor:TSOP; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SI3477DV-T1-GE3 Maggiori informazioni

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3477DV-T1-GE3 DISTI # V72:2272_09216695	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R RoHS: Compliant	0
SI3477DV-T1-GE3 DISTI # V36:1790_09216695	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R RoHS: Compliant	0	3000000:$0.3109 1500000:$0.3111 300000:$0.3239 30000:$0.3439 3000:$0.3471
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2970In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2970In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2527 15000:$0.2594 6000:$0.2693 3000:$0.2893
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R (Alt: SI3477DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3477DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2436 18000:$0.2503 12000:$0.2575 6000:$0.2684 3000:$0.2766
SI3477DV-T1-GE3 DISTI # SI3477DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R (Alt: SI3477DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.1729 500:€0.1759 100:€0.1789 50:€0.1859 25:€0.2009 10:€0.2339 1:€0.3429
SI3477DV-T1-GE3 DISTI # 86R3876	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:4.2WRoHS Compliant: Yes	0	50000:$0.2460 30000:$0.2570 20000:$0.2760 10000:$0.2950 5000:$0.3200 1:$0.3270
SI3477DV-T1-GE3 DISTI # 04X9756	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -8A, TSOP-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV RoHS Compliant: Yes	0	2500:$0.3270 1000:$0.4130 500:$0.4700 250:$0.5480 100:$0.6160 50:$0.6960 25:$0.7640 1:$0.8520
SI3477DV-T1-GE3. DISTI # 15AC0294	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:4.2W,No. of Pins:6PinsRoHS Compliant: No	0	50000:$0.2460 30000:$0.2570 20000:$0.2760 10000:$0.2950 5000:$0.3200 1:$0.3270
SI3477DV-T1-GE3 DISTI # 70616162	Vishay Siliconix	SI3477DV-T1-GE3 P-channel MOSFET Transistor,8 A,12 V,6-Pin TSOP RoHS: Compliant	0	300:$0.5400 600:$0.4800 1500:$0.4200 3000:$0.3900
SI3477DV-T1-GE3 DISTI # 781-SI3477DV-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs TSOP-6 RoHS: Compliant	0	1:$0.7500 10:$0.6060 100:$0.4590 500:$0.3800 1000:$0.3040 3000:$0.2750 6000:$0.2560 9000:$0.2470 24000:$0.2370
SI3477DV-T1-GE3 DISTI # 2889720	Vishay Intertechnologies	MOSFET, P-CH, -12V, -8A, TSOP RoHS: Compliant	0	1000:$0.4960 500:$0.6200 100:$0.7840 5:$1.0300
SI3477DV-T1-GE3 DISTI # 2889720	Vishay Intertechnologies	MOSFET, P-CH, -12V, -8A, TSOP	0	500:£0.3190 250:£0.3750 100:£0.4310 10:£0.6090 1:£0.7300
SI3477DV-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs TSOP-6 RoHS: Compliant	Americas -	3000:$0.2720 6000:$0.2590 12000:$0.2500

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Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di SI3477DV-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,75 USD~~; ~~0,75 USD~~

10: ~~0,61 USD~~; ~~6,06 USD~~

100: ~~0,46 USD~~; ~~45,90 USD~~

500: ~~0,38 USD~~; ~~190,00 USD~~

1000: ~~0,30 USD~~; ~~304,00 USD~~

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SI3477DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes