SI1401EDH-T1-GE3

Mfr. #:: SI1401EDH-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 12V 4A SC-70-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI1401EDH-T1-GE3 Scheda dati
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Maggiori informazioni:: SI1401EDH-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI1401EDH-GE3

Unità di peso: 0.000265 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 6-TSSOP, SC-88, SOT-363

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: SC-70-6 (SOT-363)

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 2.8W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 4A (Tc)

Rds-On-Max-Id-Vgs: 34 mOhm @ 5.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 36nC @ 8V

Pd-Power-Dissipazione: 2.8 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 10 V

Id-Continuo-Scarico-Corrente: - 4 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1 V

Rds-On-Drain-Source-Resistenza: 34 mOhms

Polarità del transistor: Canale P

Qg-Gate-Carica: 24 nC

Transconduttanza diretta-Min: 16 S

Tags: SI1401E, SI1401, SI140, SI14, SI1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1401EDH-T1-GE3 Descrizione

***ure Electronics: Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)

***ical: Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R

***nell: MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-

SI1401EDH-T1-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI1401EDH-T1-GE3 DISTI # V72:2272_07433774	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993 1:$0.4084
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1535
SI1401EDH-T1-GE3 DISTI # C1S803603683595	Vishay Intertechnologies	MOSFETs RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993
SI1401EDH-T1-GE3 DISTI # 25778419	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 51:$0.2693
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R (Alt: SI1401EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3089 6000:€0.2109 12000:€0.1809 18000:€0.1669 30000:€0.1559
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1401EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1309 6000:$0.1269 12000:$0.1209 18000:$0.1179 30000:$0.1149
SI1401EDH-T1-GE3 DISTI # 97W2622	Vishay Intertechnologies	MOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV , RoHS Compliant: Yes	0	1:$0.4300 10:$0.3250 25:$0.2970 50:$0.2700 100:$0.2420 500:$0.1990 1000:$0.1540
SI1401EDH-T1-GE3 DISTI # 86R3831	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.1340 3000:$0.1330 6000:$0.1260 12000:$0.1120
SI1401EDH-T1-GE3 DISTI # 69W7175	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$0.6040 25:$0.5300 50:$0.4640 100:$0.3870 250:$0.3240 500:$0.2720 1000:$0.2320 2500:$0.1890
SI1401EDH-T1-GE3 DISTI # 781-SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	1112	1:$0.4300 10:$0.3250 100:$0.2420 500:$0.1990 1000:$0.1540 3000:$0.1400 6000:$0.1310
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2110
SI1401EDH-T1-GE3 DISTI # 2459404	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2070
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	5:£0.2830 25:£0.2710 100:£0.1850 250:£0.1690 500:£0.1520
SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	Americas - 36000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3	MOSFET -12V Vds 10V Vgs SC70-6
	Mfr.#: SI1401EDH-T1-GE OMO.#: OMO-SI1401EDH-T1-GE-1190	Nuovo e originale
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3-VISHAY	MOSFET P-CH 12V 4A SC-70-6
	Mfr.#: SI1401EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1401EDH-T1-GE3-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di SI1401EDH-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,17 USD~~; ~~0,17 USD~~

10: ~~0,16 USD~~; ~~1,64 USD~~

100: ~~0,16 USD~~; ~~15,51 USD~~

500: ~~0,15 USD~~; ~~73,25 USD~~

1000: ~~0,14 USD~~; ~~137,90 USD~~

Iniziare con

SI1401E 3
SI1401 4
SI140 47
SI14 148
SI1 1080

SI1401EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes