A2I20H080NR1

A2I20H080NR1
Mfr. #:
A2I20H080NR1
Produttore:
NXP / Freescale
Descrizione:
RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A2I20H080NR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2I20H080NR1 DatasheetA2I20H080NR1 Datasheet (P4-P6)A2I20H080NR1 Datasheet (P7-P9)A2I20H080NR1 Datasheet (P10-P12)A2I20H080NR1 Datasheet (P13-P15)A2I20H080NR1 Datasheet (P16-P18)A2I20H080NR1 Datasheet (P19-P21)A2I20H080NR1 Datasheet (P22)
ECAD Model:
Maggiori informazioni:
A2I20H080NR1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Amplificatore RF
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-270WBG-15
Tipo:
Amplificatore di potenza integrato a banda larga RF LDMOS
Frequenza operativa:
1.8 GHz to 2.2 GHz
P1dB - Punto di compressione:
48.5 dBm
Guadagno:
27.8 dB
Tensione di alimentazione operativa:
30 V
Frequenza di prova:
1.88 GHz
Corrente di alimentazione operativa:
195 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Bobina
Marca:
NXP / Freescale
Numero di canali:
2 Channel
Tipologia di prodotto:
Amplificatore RF
Quantità confezione di fabbrica:
500
sottocategoria:
Circuiti integrati wireless e RF
Parte # Alias:
935316155528
Unità di peso:
0.058073 oz
Tags
A2I20H080N, A2I20H08, A2I20H, A2I20, A2I2, A2I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Semiconductors SCT
Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V, FM15F
***roFlash
Amplifier, 1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722
***et
Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Parte # Mfg. Descrizione Azione Prezzo
A2I20H080NR1
DISTI # V36:1790_16024261
NXP SemiconductorsRF LDMOS WIDEBAND0
  • 500000:$35.9600
  • 250000:$35.9700
  • 50000:$37.9200
  • 5000:$42.5600
  • 500:$43.4100
A2I20H080NR1
DISTI # A2I20H080NR1-ND
NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$43.4128
A2I20H080NR1
DISTI # A2I20H080NR1
Avnet, Inc.Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$37.6900
  • 3000:$38.3900
  • 2000:$39.8900
  • 1000:$41.4900
  • 500:$43.1900
A2I20H080NR1
DISTI # A2I20H080NR1
Avnet, Inc.Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast (Alt: A2I20H080NR1)
RoHS: Compliant
Min Qty: 500
Europe - 0
  • 5000:€36.9900
  • 3000:€38.3900
  • 2000:€38.7900
  • 1000:€39.4900
  • 500:€40.0900
A2I20H080NR1
DISTI # 841-A2I20H080NR1
NXP SemiconductorsRF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP0
  • 500:$43.4200
A2I20H080NR1
DISTI # A2I20H080NR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
450
  • 1:$64.4000
  • 10:$58.2100
  • 25:$55.0300
Immagine Parte # Descrizione
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1

RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1

RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1

RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
A2I20H060N:

Mfr.#: A2I20H060N:

OMO.#: OMO-A2I20H060N--1190

Nuovo e originale
A2I20H080N

Mfr.#: A2I20H080N

OMO.#: OMO-A2I20H080N-1190

Nuovo e originale
A2I20H080NQQ1633J

Mfr.#: A2I20H080NQQ1633J

OMO.#: OMO-A2I20H080NQQ1633J-1190

Nuovo e originale
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS

AIRFAST RF LDMOS WIDEBAND INTEGR
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di A2I20H080NR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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