A2I20H080GNR1

Mfr. #:: A2I20H080GNR1
Produttore:: NXP / Freescale
Descrizione:: RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: A2I20H080GNR1 Scheda dati
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HTML Datasheet:: A2I20H080GNR1 Datasheet A2I20H080GNR1 Datasheet (P4-P6)A2I20H080GNR1 Datasheet (P7-P9)A2I20H080GNR1 Datasheet (P10-P12)A2I20H080GNR1 Datasheet (P13-P15)A2I20H080GNR1 Datasheet (P16-P18)A2I20H080GNR1 Datasheet (P19-P21)A2I20H080GNR1 Datasheet (P22)
ECAD Model:
Maggiori informazioni:: A2I20H080GNR1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: NXP

Categoria di prodotto:: Amplificatore RF

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-270WB-15

Tipo:: Amplificatore di potenza integrato a banda larga RF LDMOS

Frequenza operativa:: 1.8 GHz to 2.2 GHz

P1dB - Punto di compressione:: 48.5 dBm

Guadagno:: 27.8 dB

Tensione di alimentazione operativa:: 30 V

Frequenza di prova:: 1.88 GHz

Corrente di alimentazione operativa:: 195 mA

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 150 C

Confezione:: Bobina

Marca:: NXP / Freescale

Numero di canali:: 2 Channel

Tipologia di prodotto:: Amplificatore RF

Quantità confezione di fabbrica:: 500

sottocategoria:: Circuiti integrati wireless e RF

Parte # Alias:: 935313345528

Unità di peso:: 0.056385 oz

Tags: A2I20H08, A2I20H, A2I20, A2I2, A2I

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2I20H080GNR1 Descrizione

***W: Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722

***escale Semiconductor: AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG., 28 V

***hardson RFPD: RF & MW POWER AMPLIFIER

***et: Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast

***i-Key: AIRFAST RF LDMOS WIDEBAND INTEGR

A2I20H080GNR1 Maggiori informazioni

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
A2I20H080GNR1 DISTI # A2I20H080GNR1-ND	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGR RoHS: Not compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$43.4128
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080GNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$43.1900 1000:$41.4900 2000:$39.8900 3000:$38.3900 5000:$37.6900
A2I20H080GNR1 DISTI # 841-A2I20H080GNR1	NXP Semiconductors	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V RoHS: Compliant	0	500:$43.4200
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	490	1:$66.3000 10:$59.9200 25:$56.6500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1	RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1	RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H080GNR1 OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
	Mfr.#: A2I20H060N: OMO.#: OMO-A2I20H060N--1190	Nuovo e originale
	Mfr.#: A2I20H080N OMO.#: OMO-A2I20H080N-1190	Nuovo e originale
	Mfr.#: A2I20H080NQQ1633J OMO.#: OMO-A2I20H080NQQ1633J-1190	Nuovo e originale
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS	AIRFAST RF LDMOS WIDEBAND INTEGR

Disponibilità

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A2I20H080GNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes