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IRF6678TR1PBF

IRF6678TR1PBF
Mfr. #:
IRF6678TR1PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6678TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-MX
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
30 A
Rds On - Resistenza Drain-Source:
3 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
43 nC
Pd - Dissipazione di potenza:
89 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
6.35 mm
Tipo di transistor:
1 N-Channel
Larghezza:
5.05 mm
Marca:
Infineon / IR
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001525486
Unità di peso:
0.017637 oz
Tags
IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MX PKG
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, 30V, MX; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:1.7mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:MX; Termination Type:SMD; Base Number:6678; Current, Idm Pulse:240A; Power Dissipation:2.8mW; SMD Marking:2.8; Voltage, Vds:30V; Voltage, Vgs th Max:2.25V; Voltage, Vgs th Min:1.35V
Parte # Mfg. Descrizione Azione Prezzo
IRF6678TR1PBF
DISTI # IRF6678TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6678TR1PBF
    DISTI # IRF6678TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6678TR1PBF
      DISTI # IRF6678TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6678TR1PBF
        DISTI # 70018852        		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MX PKG
        RoHS: Compliant        		0
        • 1000:$2.4300
        • 2000:$2.2300
        IRF6678TR1PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***770
        • 405:$2.2077
        • 94:$2.4753
        • 1:$4.0140
        IRF6678TR1PBF
        DISTI # 1436935        		Infineon Technologies AGMOSFET, N, DIRECTFET, 30V, MX
        RoHS: Compliant        		0
        • 500:$3.3100
        • 1000:$3.3100
        • 250:$3.4900
        • 100:$3.6300
        • 10:$4.0000
        • 1:$4.2700
        Immagine Parte # Descrizione
        IRF6674TRPBF

        Mfr.#: IRF6674TRPBF

        OMO.#: OMO-IRF6674TRPBF

        		 MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
        IRF6674TR1PBF

        Mfr.#: IRF6674TR1PBF

        OMO.#: OMO-IRF6674TR1PBF

        		 MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
        IRF6678TR1PBF

        Mfr.#: IRF6678TR1PBF

        OMO.#: OMO-IRF6678TR1PBF

        		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
        IRF6678

        Mfr.#: IRF6678

        OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 30A DIRECTFET
        IRF6678TR1PBF

        Mfr.#: IRF6678TR1PBF

        OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 30A DIRECTFET
        IRF6678TR1

        Mfr.#: IRF6678TR1

        OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 30A DIRECTFET
        IRF6674TRPBF

        Mfr.#: IRF6674TRPBF

        OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
        IRF6674TR1PBF

        Mfr.#: IRF6674TR1PBF

        OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
        IRF6678TRPBF

        Mfr.#: IRF6678TRPBF

        OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
        Disponibilità
        Azione:
        Available
        Su ordine:
        5500
        Inserisci la quantità:
        Il prezzo attuale di IRF6678TR1PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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