IRF6678TRPBF

Mfr. #:: IRF6678TRPBF
Produttore:: Infineon Technologies
Descrizione:: MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRF6678TRPBF Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: IR

categoria di prodotto: FET - Single

Tags: IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6678TRPBF Descrizione

***(Formerly Allied Electronics): A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX packag

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in

***(Formerly Allied Electronics): A 30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE IN THE DIRECTFET MT PACKAG

*** Source Electronics: Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R / MOSFET N-CH 30V 30A DIRECTFET

***ure Electronics: Single N-Channel 30 V 3.4 mOhm 65 nC HEXFET® Power Mosfet - DirectFET®

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes

***ernational Rectifier: A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in

***nell: MOSFET, N-CH, 30V, 170A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.64V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MT; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): 30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MT

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes

***ernational Rectifier: A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in

***nell: MOSFET, N, DIRECTFET, 30V, MT; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Base Number:6618; Current, Idm Pulse:240A; Marking, SMD:2.8; Power Dissipation:2.8mW; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V

***ure Electronics: Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®

***ment14 APAC: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31

***ark: N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)

***icroelectronics: N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package

*** Source Electronics: Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5

***ure Electronics: N-Channel 30 V 1.75 mOhm Surface Mount STripFET V MosFet - PowerFLAT 5x6

***ark: Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes

***p One Stop Global: Trans MOSFET N-CH 30V 160A 8-Pin Power Flat EP T/R

***ure Electronics: N-Channel 30 V 2.1 mOhm SMT Power MOSFET - PowerFLAT5x6

***icroelectronics: N-channel 30 V, 0.0016 Ohm typ., 160 A STripFET H7 Power MOSFETs plus monolithic Schottky in a PowerFLAT 5x6 package

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRF6678TRPBF DISTI # IRF6678TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	24In Stock	10:$3.7110 1:$4.1600
IRF6678TRPBF DISTI # IRF6678TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	24In Stock	10:$3.7110 1:$4.1600
IRF6678TRPBF DISTI # IRF6678TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6678TRPBF DISTI # 70019589	Infineon Technologies AG	A 30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE IN THE DIRECTFET MX PACKAG RoHS: Compliant	0	1:$3.9300 2:$3.8510 5:$3.7340 10:$3.5760 25:$3.3410
IRF6678TRPBF DISTI # 942-IRF6678TRPBF	Infineon Technologies AG	MOSFET 30V N-CH HEXFET 2.2mOhms 43nC RoHS: Compliant	0

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IRF6674TRPBF OMO.#: OMO-IRF6674TRPBF	MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
	Mfr.#: IRF6674TR1PBF OMO.#: OMO-IRF6674TR1PBF	MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
	Mfr.#: IRF6678TR1PBF OMO.#: OMO-IRF6678TR1PBF	MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
	Mfr.#: IRF6678 OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6678TR1PBF OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6678TR1 OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6674TRPBF OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
	Mfr.#: IRF6674TR1PBF OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
	Mfr.#: IRF6678TRPBF OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES	MOSFET 30V N-CH HEXFET 2.2mOhms 43nC

Disponibilità

Azione:: Available
Su ordine:: 3000
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Il prezzo attuale di IRF6678TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,68 USD~~; ~~3,68 USD~~

10: ~~3,49 USD~~; ~~34,93 USD~~

100: ~~3,31 USD~~; ~~330,89 USD~~

500: ~~3,12 USD~~; ~~1 562,50 USD~~

1000: ~~2,94 USD~~; ~~2 941,20 USD~~

Iniziare con

IRF6678T 3
IRF6678 4
IRF667 6
IRF66 184
IRF6 688
IRF 8615

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IRF6678TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes