CSD25211W1015

Mfr. #:: CSD25211W1015
Descrizione:: MOSFET P-CH 20V 3.2A 6DSBGA
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CSD25211W1015 Scheda dati
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Maggiori informazioni:: CSD25211W1015 maggiori informazioni CSD25211W1015 Product Details

Attributo del prodotto
Valore attributo

Produttore: Texas Instruments

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: CSD25211W1015

Confezione: Bobina

Unità di peso: 0.000060 oz

Stile di montaggio: SMD/SMT

Nome depositato: NexFET

Pacchetto-Custodia: DSBGA-6

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Canale singolo

Tipo a transistor: 1 P-Channel

Pd-Power-Dissipazione: 1 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 14.2 ns

Ora di alzarsi: 8.8 ns

Vgs-Gate-Source-Voltage: - 6 V

Id-Continuo-Scarico-Corrente: - 3.2 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 800 mV

Rds-On-Drain-Source-Resistenza: 33 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 36.9 ns

Tempo di ritardo all'accensione tipico: 13.6 ns

Qg-Gate-Carica: 3.4 nC

Transconduttanza diretta-Min: 12 S

Tags: CSD252, CSD25, CSD2, CSD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25211W1015 Descrizione

***as Instruments: -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection 6-DSBGA -55 to 150

***et: Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R

CSD25211W1015 Maggiori informazioni

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descrizione	Azione	Prezzo
CSD25211W1015 DISTI # 296-36578-1-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-6-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-2-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1782 6000:$0.1914 3000:$0.2046
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1739 6000:$0.1649 12000:$0.1599 18000:$0.1539 30000:$0.1499
CSD25211W1015	P-Channel NexFET&#153,Power MOSFET	5730	1000:$0.1400 750:$0.1500 500:$0.1900 250:$0.2300 100:$0.2500 25:$0.3000 10:$0.3200 1:$0.3600
CSD25211W1015 DISTI # 595-CSD25211W1015	MOSFET PCh NexFET Power MOSFET RoHS: Compliant	786	1:$0.5200 10:$0.4300 100:$0.2640 1000:$0.2040 3000:$0.1740

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: CSD25213W10 OMO.#: OMO-CSD25213W10	MOSFET P-CH NexFET Pwr MOSFET
	Mfr.#: CSD25202W15 OMO.#: OMO-CSD25202W15	MOSFET 20V P-channel NexFET Pwr MOSFET
	Mfr.#: CSD25211W1015 OMO.#: OMO-CSD25211W1015	MOSFET PCh NexFET Power MOSFET
	Mfr.#: CSD25202W15T OMO.#: OMO-CSD25202W15T	MOSFET 20V PCh NexFET Pwr MOSFET
	Mfr.#: CSD25201W15 OMO.#: OMO-CSD25201W15	MOSFET P-Channel NexFET Pwr MOSFET
	Mfr.#: CSD25202W15T OMO.#: OMO-CSD25202W15T-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 4A 9DSBGA
	Mfr.#: CSD25201W15 OMO.#: OMO-CSD25201W15-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET P-Channel NexFET Pwr MOSFET
	Mfr.#: CSD25202W15 OMO.#: OMO-CSD25202W15-TEXAS-INSTRUMENTS	Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R
	Mfr.#: CSD25211W1015 OMO.#: OMO-CSD25211W1015-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 3.2A 6DSBGA
	Mfr.#: CSD25213W10 OMO.#: OMO-CSD25213W10-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 1.6A 4DSBGA

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di CSD25211W1015 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,21 USD~~; ~~0,21 USD~~

10: ~~0,20 USD~~; ~~2,00 USD~~

100: ~~0,19 USD~~; ~~18,90 USD~~

500: ~~0,18 USD~~; ~~89,25 USD~~

1000: ~~0,17 USD~~; ~~168,00 USD~~

Iniziare con

CSD252 5
CSD25 33
CSD2 105
CSD 800

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CSD25211W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes