IKY50N120CH3XKSA1

IKY50N120CH3XKSA1
Mfr. #:
IKY50N120CH3XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT 1200V 100A TO247-4
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKY50N120CH3XKSA1 Scheda dati
Consegna:
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IKY
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
IGBT, 1.2KV, 100A, 652W, TO-247
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts. | Summary of Features: Extremely low control inductance loop with extra emitter pin for driver feedback; 20% reduction in total switching losses compared to 3pin package using same technology; Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint | Benefits: Highest efficiency with lowest switching losses 1200 V IGBT; High power density 1200V discrete IGBT; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descrizione Azione Prezzo
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1-ND
Infineon Technologies AGIGBT 1200V 100A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube
240In Stock
  • 720:$8.7800
  • 240:$9.8699
  • 25:$11.2020
  • 10:$11.6860
  • 1:$12.7200
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1
Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKY50N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$7.2900
  • 1440:$7.3900
  • 960:$7.6900
  • 480:$7.9900
  • 240:$8.2900
IKY50N120CH3XKSA1
DISTI # SP001465126
Infineon Technologies AGIGBT PRODUCTS (Alt: SP001465126)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€5.9900
  • 500:€6.3900
  • 100:€6.6900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€8.1900
IKY50N120CH3XKSA1
DISTI # 93AC7076
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes219
  • 500:$8.4400
  • 250:$9.0200
  • 100:$9.4900
  • 50:$10.1400
  • 25:$10.7800
  • 10:$11.2400
  • 1:$12.2200
IKY50N120CH3XKSA1
DISTI # 726-IKY50N120CH3XKSA
Infineon Technologies AGIGBT Transistors
RoHS: Compliant
199
  • 1:$12.1000
  • 10:$11.1300
  • 25:$10.6700
  • 100:$9.4000
  • 250:$8.9300
  • 500:$8.3600
IKY50N120CH3XKSA1
DISTI # 1623281
Infineon Technologies AGIGBT 1200V 50A HIGHSPEED3 DIODE TO-247-4, TU219
  • 60:£5.3760
  • 30:£5.7060
IKY50N120CH3XKSA1
DISTI # 2986353
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant
219
  • 250:$10.8800
  • 100:$12.4000
  • 50:$13.3100
  • 10:$14.1900
  • 5:$16.3100
  • 1:$17.6200
IKY50N120CH3XKSA1
DISTI # 2986353
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247219
  • 100:£6.8100
  • 50:£7.2700
  • 10:£7.7300
  • 5:£8.7800
  • 1:£9.2900
Immagine Parte # Descrizione
IKY50N120CH3XKSA1

Mfr.#: IKY50N120CH3XKSA1

OMO.#: OMO-IKY50N120CH3XKSA1

IGBT Transistors
IKY50N120CH3XKSA1

Mfr.#: IKY50N120CH3XKSA1

OMO.#: OMO-IKY50N120CH3XKSA1-INFINEON-TECHNOLOGIES

IGBT 1200V 100A TO247-4
Disponibilità
Azione:
Available
Su ordine:
2000
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