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IKY50N120CH3XKSA1

IKY50N120CH3XKSA1
Mfr. #:
IKY50N120CH3XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKY50N120CH3XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO247-4-2
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
100 A
Pd - Dissipazione di potenza:
652 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
100 A
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Parte # Alias:
IKY50N120CH3 SP001465126
Unità di peso:
0.211644 oz
Tags
IKY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
IGBT, 1.2KV, 100A, 652W, TO-247
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts. | Summary of Features: Extremely low control inductance loop with extra emitter pin for driver feedback; 20% reduction in total switching losses compared to 3pin package using same technology; Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint | Benefits: Highest efficiency with lowest switching losses 1200 V IGBT; High power density 1200V discrete IGBT; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descrizione Azione Prezzo
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1-ND		Infineon Technologies AGIGBT 1200V 100A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 720:$8.7800
  • 240:$9.8699
  • 25:$11.2020
  • 10:$11.6860
  • 1:$12.7200
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1		Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKY50N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.2900
  • 1440:$7.3900
  • 960:$7.6900
  • 480:$7.9900
  • 240:$8.2900
IKY50N120CH3XKSA1
DISTI # SP001465126		Infineon Technologies AGIGBT PRODUCTS (Alt: SP001465126)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.9900
  • 500:€6.3900
  • 100:€6.6900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€8.1900
IKY50N120CH3XKSA1
DISTI # 93AC7076		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes219
  • 500:$8.4400
  • 250:$9.0200
  • 100:$9.4900
  • 50:$10.1400
  • 25:$10.7800
  • 10:$11.2400
  • 1:$12.2200
IKY50N120CH3XKSA1
DISTI # 726-IKY50N120CH3XKSA		Infineon Technologies AGIGBT Transistors
RoHS: Compliant		199
  • 1:$12.1000
  • 10:$11.1300
  • 25:$10.6700
  • 100:$9.4000
  • 250:$8.9300
  • 500:$8.3600
IKY50N120CH3XKSA1
DISTI # 1623281		Infineon Technologies AGIGBT 1200V 50A HIGHSPEED3 DIODE TO-247-4, TU219
  • 60:£5.3760
  • 30:£5.7060
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant		219
  • 250:$10.8800
  • 100:$12.4000
  • 50:$13.3100
  • 10:$14.1900
  • 5:$16.3100
  • 1:$17.6200
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247219
  • 100:£6.8100
  • 50:£7.2700
  • 10:£7.7300
  • 5:£8.7800
  • 1:£9.2900
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NLCV32T-100K-EFD

Mfr.#: NLCV32T-100K-EFD

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 INDUCTOR, 10UH, 10%, 30MHZ, AEC-Q200
TLV2316IDR

Mfr.#: TLV2316IDR

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Disponibilità
Azione:
199
Su ordine:
2182
Inserisci la quantità:
Il prezzo attuale di IKY50N120CH3XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
12,10 USD
12,10 USD
10
11,13 USD
111,30 USD
25
10,67 USD
266,75 USD
100
9,40 USD
940,00 USD
250
8,93 USD
2 232,50 USD
500
8,36 USD
4 180,00 USD
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