FDMD85100

FDMD85100
Mfr. #:
FDMD85100
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMD85100 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
FDMD85100 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
FET - Array
Serie
PowerTrenchR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.008818 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-PowerWDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-Power 5x6
Configurazione
Dual
Tipo FET
2 N-Channel (Half Bridge)
Potenza-Max
2.2W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
2230pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
10.4A
Rds-On-Max-Id-Vgs
9.9 mOhm @ 10.4A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Carica-Qg-Vgs
31nC @ 10V
Pd-Power-Dissipazione
50 W 50 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
4.2 ns 4.4 ns
Ora di alzarsi
5 ns 5.6 ns
Vgs-Gate-Source-Voltage
20 V 20 V
Id-Continuo-Scarico-Corrente
48 A 48 A
Vds-Drain-Source-Breakdown-Voltage
100 V 100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2 V 2V
Rds-On-Drain-Source-Resistenza
18.7 mOhms 18.6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
19 ns 18 ns
Tempo di ritardo all'accensione tipico
14 ns 12.5 ns
Qg-Gate-Carica
22 nC 21 nC
Transconduttanza diretta-Min
27 S 26 S
Modalità canale
Aumento
Tags
FDMD85, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDMD85100
DISTI # V72:2272_06337942
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
FDMD85100
DISTI # FDMD85100CT-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100DKR-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5182In Stock
  • 1000:$1.6904
  • 500:$2.0043
  • 100:$2.4752
  • 10:$3.0190
  • 1:$3.3800
FDMD85100
DISTI # FDMD85100TR-ND
ON SemiconductorMOSFET 2N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$1.5591
FDMD85100
DISTI # 27527757
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC9000
  • 3000:$1.5590
FDMD85100
DISTI # 25975390
ON Semiconductor100V DUAL N-CHANNEL POWERTRENC2898
  • 1000:$1.4840
  • 500:$1.7360
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 5:$2.7030
FDMD85100
DISTI # FDMD85100
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
FDMD85100
DISTI # FDMD85100
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€2.2900
  • 6000:€1.7900
  • 12000:€1.5900
  • 18000:€1.3900
  • 30000:€1.3900
FDMD85100
DISTI # 512-FDMD85100
ON SemiconductorMOSFET FET 100V 9.9 MOHM PQFN56
RoHS: Compliant
2807
  • 1:$2.8300
  • 10:$2.4000
  • 100:$2.0800
  • 250:$1.9800
  • 500:$1.7700
  • 1000:$1.5000
FDMD85100Fairchild Semiconductor CorporationPower Field-Effect Transistor
RoHS: Compliant
2101
  • 1000:$1.5500
  • 500:$1.6300
  • 100:$1.7000
  • 25:$1.7700
  • 1:$1.9100
FDMD85100
DISTI # C1S541901391436
ON SemiconductorTrans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R
RoHS: Compliant
2898
  • 250:$1.9310
  • 100:$2.0230
  • 25:$2.3150
  • 10:$2.3170
  • 1:$2.7030
Immagine Parte # Descrizione
FDMD8440L

Mfr.#: FDMD8440L

OMO.#: OMO-FDMD8440L

MOSFET FET 40V 87A 2.6 mOhm
FDMD8560L

Mfr.#: FDMD8560L

OMO.#: OMO-FDMD8560L

MOSFET 60V Dual N-Channel PowerTrench MOSFET
FDMD8260LET60

Mfr.#: FDMD8260LET60

OMO.#: OMO-FDMD8260LET60

MOSFET 60V/20V Dual Nch Power Trench MOSFET
FDMD8240L

Mfr.#: FDMD8240L

OMO.#: OMO-FDMD8240L

MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET
FDMD85100

Mfr.#: FDMD85100

OMO.#: OMO-FDMD85100

MOSFET FET 100V 9.9 MOHM PQFN56
FDMD8260LET60

Mfr.#: FDMD8260LET60

OMO.#: OMO-FDMD8260LET60-ON-SEMICONDUCTOR

MOSFET 2N-CH 60V 15A
FDMD84100

Mfr.#: FDMD84100

OMO.#: OMO-FDMD84100-ON-SEMICONDUCTOR

MOSFET 2N-CH 100V 7A 8-PQFN
FDMD86100

Mfr.#: FDMD86100

OMO.#: OMO-FDMD86100-ON-SEMICONDUCTOR

MOSFET 2N-CH 100V
FDMD8240LET40

Mfr.#: FDMD8240LET40

OMO.#: OMO-FDMD8240LET40-ON-SEMICONDUCTOR

MOSFET 2N-CH 40V 24A POWER3.3X5
FDMD8900

Mfr.#: FDMD8900

OMO.#: OMO-FDMD8900-ON-SEMICONDUCTOR

MOSFET 2N-CH 30V POWER
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di FDMD85100 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,94 USD
1,94 USD
10
1,84 USD
18,38 USD
100
1,74 USD
174,15 USD
500
1,64 USD
822,40 USD
1000
1,55 USD
1 548,00 USD
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