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SIZ340DT-T1-GE3

SIZ340DT-T1-GE3
Mfr. #:
SIZ340DT-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIZ340DT-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ340DT-T1-GE3 DatasheetSIZ340DT-T1-GE3 Datasheet (P4-P6)SIZ340DT-T1-GE3 Datasheet (P7-P9)SIZ340DT-T1-GE3 Datasheet (P10-P12)SIZ340DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Maggiori informazioni:
SIZ340DT-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAIR-3x3-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
30 A, 40 A
Rds On - Resistenza Drain-Source:
9.5 mOhms, 5.1 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
- 16 V, 20 V
Qg - Carica cancello:
19 nC, 35 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
16.7 W, 31 W
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
TAGLIA
Tipo di transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
37 S, 60 S
Tempo di caduta:
7 ns, 7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
55 ns, 82 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
16 ns, 20 ns
Tempo di ritardo di accensione tipico:
13 ns, 22 ns
Tags
SIZ34, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, Dual N-Channel MOSFET, 30 A, 40 A, 30 V, 8-Pin PowerPAIR Vishay SIZ340DT-T1-GE3
***ical
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R
***et Europe
Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
***ure Electronics
MOSFET 2N-CH 30V 30A SOT-23
***ark
MOSFET, DUAL N-CH, 30V, 40A, POWERPAIR-8
***i-Key
MOSFET 2N-CH 30V 30A PWRPAIR3X3
***et
DUAL N-CH POWERPAIR 3X3 30V 9.5 MOHM@10V
***
DUAL N-CHANNEL 30-V (D-S)
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descrizione Azione Prezzo
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4096
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 30A PWRPAIR3X3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4521
  • 500:$0.5726
  • 100:$0.7384
  • 10:$0.9340
  • 1:$1.0500
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # SIZ340DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ340DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.3869
  • 12000:$0.3749
  • 18000:$0.3599
  • 30000:$0.3499
  • 60000:$0.3409
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 30A/40A 9-Pin PowerPAIR Case - Product that comes on tape, but is not reeled (Alt: 29X6567)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 29X6568		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.4150
  • 6000:$0.4130
  • 9000:$0.3940
  • 12000:$0.3540
SIZ340DT-T1-GE3
DISTI # 29X6567		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 40A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:31W, RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 55X3089		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V , RoHS Compliant: Yes0
  • 1:$0.9400
  • 25:$0.7670
  • 50:$0.6780
  • 100:$0.5880
  • 250:$0.5470
  • 500:$0.5060
  • 1000:$0.3990
SIZ340DT-T1-GE3
DISTI # 70617613		Vishay SiliconixMOSFET Dual N-Ch 30V 30/40A PowerPAIR8EP
RoHS: Compliant		0
  • 100:$0.5800
  • 1500:$0.4300
  • 3000:$0.3900
  • 6000:$0.3700
SIZ340DT-T1-GE3
DISTI # 78-SIZ340DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
RoHS: Compliant		0
  • 1:$0.9400
  • 10:$0.7670
  • 100:$0.5880
  • 500:$0.5060
  • 1000:$0.4790
  • 3000:$0.4440
SIZ340DT-T1-GE3
DISTI # 2422226		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3
DISTI # 2422226RL		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
RoHS: Compliant		0
  • 1:$1.5000
  • 10:$1.2200
  • 100:$0.9310
  • 500:$0.8020
  • 1000:$0.6320
  • 3000:$0.5910
  • 6000:$0.5600
  • 9000:$0.5400
SIZ340DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3Americas -
    SIZ340DT-T1-GE3
    DISTI # 2422226    		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 40A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£0.6070
    • 25:£0.5950
    • 100:£0.4440
    • 250:£0.4290
    • 500:£0.3910
    Immagine Parte # Descrizione
    UCC27531DBVR

    Mfr.#: UCC27531DBVR

    OMO.#: OMO-UCC27531DBVR

    		 Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dvr
    UCC27536DBVR

    Mfr.#: UCC27536DBVR

    OMO.#: OMO-UCC27536DBVR

    		 Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Gate Dvr
    MTFC16GAPALBH-IT TR

    Mfr.#: MTFC16GAPALBH-IT TR

    OMO.#: OMO-MTFC16GAPALBH-IT-TR

    		 eMMC
    SIRC18DP-T1-GE3

    Mfr.#: SIRC18DP-T1-GE3

    OMO.#: OMO-SIRC18DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
    CRCW04022K21FKEDC

    Mfr.#: CRCW04022K21FKEDC

    OMO.#: OMO-CRCW04022K21FKEDC

    		 Thick Film Resistors - SMD 1/16W 2.21Kohms 1% Commercial Use
    CRCW0402100KJNEDC

    Mfr.#: CRCW0402100KJNEDC

    OMO.#: OMO-CRCW0402100KJNEDC

    		 Thick Film Resistors - SMD 1/16watt 100Kohms 5% Commercial Use
    NCP18XH103J03RB

    Mfr.#: NCP18XH103J03RB

    OMO.#: OMO-NCP18XH103J03RB-MURATA-ELECTRONICS

    		 Thermistors - NTC 10K OHM 5%
    DSC1121CM1-100.0000T

    Mfr.#: DSC1121CM1-100.0000T

    OMO.#: OMO-DSC1121CM1-100-0000T-MICROCHIP-TECHNOLOGY

    		 Oscillator MEMS 100MHz ±50ppm (Stability) 15pF CMOS 55% 2.5V/3.3V Automotive 6-Pin QFN SMD T/R
    SIRC18DP-T1-GE3

    Mfr.#: SIRC18DP-T1-GE3

    OMO.#: OMO-SIRC18DP-T1-GE3-VISHAY

    		 N-Channel 30 V (D-S) MOSFET with Schottky Diode
    CRCW0402100KJNEDC

    Mfr.#: CRCW0402100KJNEDC

    OMO.#: OMO-CRCW0402100KJNEDC-VISHAY-DALE

    		 D10/CRCW0402-C 200 100K 5% ET7
    Disponibilità
    Azione:
    21
    Su ordine:
    2004
    Inserisci la quantità:
    Il prezzo attuale di SIZ340DT-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,93 USD
    0,93 USD
    10
    0,77 USD
    7,67 USD
    100
    0,59 USD
    58,80 USD
    500
    0,51 USD
    253,00 USD
    1000
    0,40 USD
    399,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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