SIRC18DP-T1-GE3

Mfr. #:: SIRC18DP-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIRC18DP-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIRC18DP-T1-GE3 Datasheet SIRC18DP-T1-GE3 Datasheet (P4-P6)SIRC18DP-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:: SIRC18DP-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 60 A

Rds On - Resistenza Drain-Source:: 850 uOhms

Vgs th - Tensione di soglia gate-source:: 1 V

Vgs - Tensione Gate-Source:: - 16 V, 20 V

Qg - Carica cancello:: 111 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 54.3 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIGNORE

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 70 S

Tempo di caduta:: 12 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 21 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 30 ns

Tempo di ritardo di accensione tipico:: 16 ns

Tags: SIRC1, SIRC, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRC18DP-T1-GE3 Descrizione

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R

***ical: Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R

***i-Key: MOSFET N-CH 30V 60A POWERPAKSO-8

***ark: MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:54.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 30V, 60A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):850µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:54.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIRC18DP-T1-GE3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIRC18DP-T1-GE3 DISTI # V72:2272_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	75000:$0.5302 30000:$0.5332 15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 10:$1.1112 1:$1.4801
SIRC18DP-T1-GE3 DISTI # V99:2348_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	0	6000000:$0.5738 3000000:$0.5739 600000:$0.5746 60000:$0.5754 6000:$0.5755
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.5262 6000:$0.5467 3000:$0.5755
SIRC18DP-T1-GE3 DISTI # 30209835	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 12:$1.1112
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC18DP-T1-GE3) Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5009 30000:$0.5149 18000:$0.5299 12000:$0.5519 6000:$0.5689
SIRC18DP-T1-GE3 DISTI # 59AC7428	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT	0	10000:$0.4980 6000:$0.5090 4000:$0.5290 2000:$0.5880 1000:$0.6460 1:$0.6740
SIRC18DP-T1-GE3 DISTI # 78-SIRC18DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	8359	1:$1.3600 10:$1.1200 100:$0.8650 500:$0.7430 1000:$0.5870 3000:$0.5480 6000:$0.5200 9000:$0.5010
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO RoHS: Compliant	48	1000:$0.9580 500:$1.2200 100:$1.4700 5:$1.8900
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO	48	500:£0.5680 250:£0.6150 100:£0.6610 10:£0.9100 1:£1.1900

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	Mfr.#: UCC27511ADBVR OMO.#: OMO-UCC27511ADBVR	Gate Drivers Single Driver
	Mfr.#: SIRA80DP-T1-RE3 OMO.#: OMO-SIRA80DP-T1-RE3	MOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8
	Mfr.#: SIR638ADP-T1-RE3 OMO.#: OMO-SIR638ADP-T1-RE3	MOSFET 40V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7157DP-T1-GE3 OMO.#: OMO-SI7157DP-T1-GE3	MOSFET -20V Vds 12V Vgs PowerPAK SO-8
	Mfr.#: STPSC12065GY-TR OMO.#: OMO-STPSC12065GY-TR	Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
	Mfr.#: APV2111V OMO.#: OMO-APV2111V	Photodiode Output Optocouplers Driver 4-pin SSOP Driver 4-pin SSOP
	Mfr.#: SIRA80DP-T1-RE3 OMO.#: OMO-SIRA80DP-T1-RE3-VISHAY	MOSFET N-CHAN 30V POWERPAK SO-8
	Mfr.#: SI7157DP-T1-GE3 OMO.#: OMO-SI7157DP-T1-GE3-VISHAY	MOSFET P-CH 20V 60A PPAK SO-8
	Mfr.#: STPSC12065GY-TR OMO.#: OMO-STPSC12065GY-TR-STMICROELECTRONICS	DIODES AND RECTIFIERS
	Mfr.#: DSC1121CM1-100.0000T OMO.#: OMO-DSC1121CM1-100-0000T-MICROCHIP-TECHNOLOGY	Oscillator MEMS 100MHz ±50ppm (Stability) 15pF CMOS 55% 2.5V/3.3V Automotive 6-Pin QFN SMD T/R

Disponibilità

Azione:: Available
Su ordine:: 1991
Inserisci la quantità:

Il prezzo attuale di SIRC18DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,36 USD~~; ~~1,36 USD~~

10: ~~1,12 USD~~; ~~11,20 USD~~

100: ~~0,86 USD~~; ~~86,50 USD~~

500: ~~0,74 USD~~; ~~371,50 USD~~

1000: ~~0,59 USD~~; ~~587,00 USD~~

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SIRC18DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes