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IPD80R1K2P7ATMA1

IPD80R1K2P7ATMA1
Mfr. #:
IPD80R1K2P7ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 800V 4.5A TO252-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD80R1K2P7ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.2 Ohm 11 nC CoolMOS™ Power Mosfet - DPAK
***i-Key
MOSFET N-CH 800V 4.5A TO252-3
***ronik
N-CH 800V 4,5A 1200mOhm DPAK
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 4.5A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:37W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 4,5A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:37W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Parte # Mfg. Descrizione Azione Prezzo
IPD80R1K2P7ATMA1
DISTI # V36:1790_18204698		Infineon Technologies AGIPD80R1K2P7ATMA10
  • 2500000:$0.3690
  • 1250000:$0.3693
  • 250000:$0.4001
  • 25000:$0.4562
  • 2500:$0.4657
IPD80R1K2P7ATMA1
DISTI # IPD80R1K2P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 4.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2480In Stock
  • 1000:$0.5139
  • 500:$0.6510
  • 100:$0.7880
  • 10:$1.0110
  • 1:$1.1300
IPD80R1K2P7ATMA1
DISTI # IPD80R1K2P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 4.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2480In Stock
  • 1000:$0.5139
  • 500:$0.6510
  • 100:$0.7880
  • 10:$1.0110
  • 1:$1.1300
IPD80R1K2P7ATMA1
DISTI # IPD80R1K2P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 4.5A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.4258
  • 5000:$0.4424
  • 2500:$0.4657
IPD80R1K2P7ATMA1
DISTI # IPD80R1K2P7ATMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD80R1K2P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4019
  • 15000:$0.4089
  • 10000:$0.4239
  • 5000:$0.4399
  • 2500:$0.4559
IPD80R1K2P7ATMA1
DISTI # SP001644252		Infineon Technologies AGLOW POWER_NEW (Alt: SP001644252)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.3759
  • 15000:€0.4049
  • 10000:€0.4389
  • 5000:€0.4789
  • 2500:€0.5859
IPD80R1K2P7ATMA1
DISTI # 24AC9041		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
  • 1000:$0.5210
  • 500:$0.6400
  • 250:$0.6770
  • 100:$0.7150
  • 50:$0.7790
  • 25:$0.8450
  • 10:$0.9090
  • 1:$1.0500
IPD80R1K2P7ATMA1
DISTI # 726-IPD80R1K2P7ATMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		2099
  • 1:$1.0400
  • 10:$0.8870
  • 100:$0.6820
  • 500:$0.6020
  • 1000:$0.4760
IPD80R1K2P7ATMA1
DISTI # IPD80R1K2P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,3.1A,37W,PG-TO252-32497
  • 500:$0.5500
  • 100:$0.6000
  • 25:$0.6500
  • 5:$0.7400
  • 1:$0.8300
IPD80R1K2P7ATMA1
DISTI # 2771319		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, TO-252
RoHS: Compliant		0
  • 1000:$0.7750
  • 500:$0.9810
  • 100:$1.1900
  • 10:$1.5300
  • 1:$1.7000
IPD80R1K2P7ATMA1
DISTI # 2771319		Infineon Technologies AGMOSFET, N-CH, 800V, 4.5A, TO-252229
  • 500:£0.4600
  • 250:£0.4910
  • 100:£0.5210
  • 10:£0.7330
  • 1:£0.9060
Immagine Parte # Descrizione
IPD80R1K4P7ATMA1

Mfr.#: IPD80R1K4P7ATMA1

OMO.#: OMO-IPD80R1K4P7ATMA1

 MOSFET
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEBTMA1

Mfr.#: IPD80R1K4CEBTMA1

OMO.#: OMO-IPD80R1K4CEBTMA1

 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4P7ATMA1-CUT TAPE

Mfr.#: IPD80R1K4P7ATMA1-CUT TAPE

OMO.#: OMO-IPD80R1K4P7ATMA1-CUT-TAPE-1190

 Nuovo e originale
IPD80R1K0CE

Mfr.#: IPD80R1K0CE

OMO.#: OMO-IPD80R1K0CE-1190

 Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
IPD80R1K0CEATMA1

Mfr.#: IPD80R1K0CEATMA1

OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 5.7A TO252-3
IPD80R1K0CEBTMA1 , 2SD24

Mfr.#: IPD80R1K0CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190

 Nuovo e originale
IPD80R1K2P7ATMA1

Mfr.#: IPD80R1K2P7ATMA1

OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 4.5A TO252-3
IPD80R1K4CEATMA1 , 2SD24

Mfr.#: IPD80R1K4CEATMA1 , 2SD24

OMO.#: OMO-IPD80R1K4CEATMA1-2SD24-1190

 Nuovo e originale
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 800V 3.9A DPAK-2
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IPD80R1K2P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,60 USD
0,60 USD
10
0,57 USD
5,73 USD
100
0,54 USD
54,26 USD
500
0,51 USD
256,20 USD
1000
0,48 USD
482,30 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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